Publications

Affichage de 10131 à 10140 sur 16181


  • Communication dans un congrès

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

N. Malbert, N. Labat, A. Curutchet, C. Sury, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, Y. Douvry, C. Dua, M. Oualli, M. Piazza, C. Bru-Chevallier, J.M. Bluet, W. Chikhaoui

IEEE International Reliability Physics Symposium, IRPS 2010, 2010, United States. pp.139-145, ⟨10.1109/IRPS.2010.5488839⟩. ⟨hal-00550009⟩

  • Communication dans un congrès

Low temperature grown GaAsSb as photoconductive material near 1.06 µm

X. Wallart, Christophe Coinon, S.R. Plissard, S. Godey, O. Offranc, V. Magnin, Jean-Francois Lampin

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Kagawa, Japan. ⟨hal-00573575⟩

  • Communication dans un congrès

Statistics of multipath component clustering in an office environment

E. Tanghe, W. Joseph, M. Lienard, A. Nasr, P. Stefanut, L. Martens, Pierre Degauque

4th European Conference on Antennas and Propagation, EuCAP 2010, 2010, Spain. pp.1-5. ⟨hal-00568952⟩

  • Communication dans un congrès

Hydration layers of alcohol and proteins analyzed by THz BioMEMS

Simon Laurette, A. Treizebre, Bertrand Bocquet

A Terahertz (THz) dedicated microsystem is presented. Design, microfabrication and subTHz (0.5-0.11THz) measurements are shown in this article. Ethanol/Water mixtures measurements analysis show that THz spectroscopy is able to characterize hydration shells of a solute in water, in term of…

14th International Conference Miniaturized Systems for Chemistry and Life Sciences, µTAS 2010, Oct 2010, Groningen, Netherlands. pp.1964-1966. ⟨hal-00568978⟩

  • Communication dans un congrès

EWOD-based micromixing for fast protein sensing using SPR

G. Perry, N. Maalouli, B. Pinchemel, M. Bouazaoui, V. Thomy, Rabah Boukherroub

2nd European Conference on Microfluidics, µFlu'10, 2010, France. CD-ROM, paper 10-207, 1-6. ⟨hal-00568975⟩

  • Communication dans un congrès

Statistics of multipath component clustering in an office environment

E. Tanghe, W. Joseph, M. Lienard, A. Nasr, P. Stefanut, L. Martens, Pierre Degauque

10th COST 2100 Management Committee Meeting, 2010, Greece. pp.TD(10)019, 1-6. ⟨hal-00568956⟩

  • Communication dans un congrès

Monte Carlo study of electron transport and self-heating in InAs nanowire MISFETs

T. Sadi, Jean-Luc Thobel, F. Dessenne

34th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2010, 2010, Germany. pp.181-182. ⟨hal-00568950⟩

  • Communication dans un congrès

Blind modulation identification for MIMO systems

Kais Hassan, Crépin Nsiala-Nzéza, Marion Berbineau, Walaa Hamouda, Iyad Dayoub

Modulation type is one of the most important characteristics used in signal waveform identification and classification. In this paper, an algorithm for blind digital modulation identification for multiple-input multiple-output (MIMO) systems is proposed. The suggested algorithm is verified using…

IEEE Global Telecommunications Conference, GLOBECOM 2010, Dec 2010, Miami, FL, United States. pp.1-5, ⟨10.1109/GLOCOM.2010.5683718⟩. ⟨hal-00568620⟩

  • Chapitre d'ouvrage

Multimode transmitters with ΔΣ-based all-digital RF signal generation

A. Frappe, A. Flament, B. Stefanelli, A. Kaiser

A.H.M. van Roermund, M. Steyaert, H. Casier. Analog circuit design : smart data converters, filters on chip, multimode transmitters, Springer-Verlag, pp.295-314, 2010. ⟨hal-00575857⟩

  • Communication dans un congrès

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and…

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩