Publications

Affichage de 10161 à 10170 sur 16181


  • Communication dans un congrès

G-band low noise amplifier and oscillator for synthetic aperture applications

G. Desruelles, N. Rolland, P. Rolland

40th European Microwave Conference, EuMC 2010, 2010, France. pp.525-528. ⟨hal-00549933⟩

  • Communication dans un congrès

325 GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology

F. Gianesello, R. Pilard, Sylvie Lepilliet, N. Waldhoff, C. Durand, S. Boret, B. Martineau, Gilles Dambrine, D. Gloria, B. Rauber, C. Raynaud

40th European Microwave Conference, EuMC 2010, 2010, France. pp.57-60. ⟨hal-00549919⟩

  • Autre publication scientifique

Génération par impulsions laser ultracourtes d'ondes acoustiques hautes fréquences par des nanostructures

Pierre-Adrien Mante

2010. ⟨hal-00572701⟩

  • Autre publication scientifique

Evaluation des performances en localisation d'un radar ultra large bande millimétrique pour l'automobile

Nizar Obeid

2010. ⟨hal-00572680⟩

  • Communication dans un congrès

Chimie des matériaux et catalyse : dépôts d'oxydes catalytiques sur mousses métalliques

A. Essakhi, A. Lofberg, P. Supiot, B. Mutel, S. Paul, V. Le Courtois, E. Bordes-Richard

MATERIAUX 2010, Conférence pluridisciplinaire sur les matériaux, 2010, France. pp.1-4. ⟨hal-00573206⟩

  • Communication dans un congrès

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and…

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

  • Article dans une revue

A novel design of a multiband microstrip antenna for the 3G cellular phones applications

M. Ben Ahmed, M. Bouhorma, F. El Ouaai, A. Mamouni, A.A. Boudhir

International Journal of Information and Communication Technologies, 2010, 3, pp.1-7. ⟨hal-00591736⟩

  • Communication dans un congrès

Bottom-up approach to designing nanostructured materials for a variety of applications

D. Hourlier

7th International Conference on Inorganic Materials, 2010, Biarritz, France. ⟨hal-00591743⟩