Publications

• Article dans une revue

A three-dimensional Monte Carlo model for the simulation of nanoelectronic devices

T. Sadi, Jean-Luc Thobel

We present a three-dimensional (3D) semi-classical ensemble Monte Carlo model newly developed to simulate a variety of nanoelectronic devices. The characteristics of the 3D model are compared with the widely used two-dimensional (2D) models. The advantages of our model, in terms of accuracy in…

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2010, 23, pp.200-214. ⟨10.1002/jnm.735⟩. ⟨hal-00549480⟩

• Article dans une revue

Optical response of resonator induced plasmon filters : nanometric diatomic structures

G.H. Cocoletzi, M.A. Palomino-Ovando, L. Dobrzynski, Bahram Djafari-Rouhani, Abdellatif Akjouj

Superlattices and Microstructures, 2010, 48, pp.380-387. ⟨10.1016/j.spmi.2010.07.011⟩. ⟨hal-00549441⟩

• Article dans une revue

MEMS magneto-mechanical microvalves (MMMS) for aerodynamic active flow control

Philippe Pernod, Vladimir Preobrazhensky, A. Merlen, O. Ducloux, Abdelkrim Talbi, L. Gimeno, R. Viard, Nicolas Tiercelin

Journal of Magnetism and Magnetic Materials, 2010, 322, pp.1642-1646. ⟨10.1016/j.jmmm.2009.04.086⟩. ⟨hal-00549558⟩

• Article dans une revue

High-speed programming of nanowire-gated carbon-nanotube memory devices

G. Agnus, A. Filoramo, S. Lenfant, D. Vuillaume, J.P. Bourgoin, Vincent Derycke

Small, 2010, 6, pp.2659-2663. ⟨10.1002/smll.201001293⟩. ⟨hal-00548969⟩

• Article dans une revue

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors

C. Thelander, K.A. Dick, M.T. Borgström, L.E. Fröberg, P. Caroff, H.A. Nilsson, L. Samuelson

Nanotechnology, 2010, 21, pp.205703-1-9. ⟨10.1088/0957-4484/21/20/205703⟩. ⟨hal-00548956⟩

• Article dans une revue

Electron beam nanolithography in AZnLOF 2020

E. Herth, P. Tilmant, M. Faucher, M. François, Christophe Boyaval, Francois Vaurette, Y. Deblock, Bernard Legrand, L. Buchaillot

Microelectronic Engineering, 2010, 87, pp.2057-2060. ⟨10.1016/j.mee.2009.12.079⟩. ⟨hal-00548989⟩

• Article dans une revue

Existence and collapse of Fano resonances as a function of pinning field in simple mono-mode magnetic circuits

Housni Al-Wahsh

We consider, in the frame of long-wavelength Heisenberg model, the effect of a pinning field on the spin wave band gaps and transmission spectra of a simple magnonic device. This simple device is composed of an infinite one dimensional (1D) monomode waveguide (the backbone) along which N (N’) side…

The European Physical Journal B: Condensed Matter and Complex Systems, 2010, 73, pp.527-537. ⟨10.1140/epjb/e2010-00032-7⟩. ⟨hal-00549069⟩

• Chapitre d'ouvrage

Microstub resonators based-waveguides for filtering and multiplexing devices

Yan Pennec, Bahram Djafari-Rouhani, Abdellatif Akjouj, Jerome O. Vasseur, A. Noual, L. Dobrzynski

In this chapter, we report numerical simulations, based on a two dimensions Finite Difference Time Domain (FDTD) method, of light propagation in two-dimensional semiconductor micro optical waveguides coupled to one or several lateral stubs. This resonator offers a filtering alternative to well-…

Progress in Optical Fibers Research, Nova Science Publishers, Inc., pp.83-105, 2010, 9781606924778. ⟨hal-03526132⟩

• Article dans une revue

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S.R. Plissard, K.A. Dick, X. Wallart, P. Caroff

Applied Physics Letters, 2010, 96, pp.121901-1-3. ⟨10.1063/1.3367746⟩. ⟨hal-00548716⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC…

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩