Publications

• Article dans une revue

On Principles In Sadi Carnot’s Thermodynamics (1824). Epistemological Reflections

Raffaele Pisano

Almagest, 2010, 1 (2), pp.128-179. ⟨10.1484/J.ALMA.3.16⟩. ⟨hal-04507955⟩

• Communication dans un congrès

Atomic scale dopant metrology in an individual silicon nanowire by atom probe tomography

W.H. Chen, Rodrigue Lardé, Emmanuel Cadel, T. Xu, J.P. Nys, B. Grandidier, D. Stiévenard, Philippe Pareige

In this work, the p-type silicon nanowires (SiNWs) are grown by the Chemical Vapor Deposition (CVD) method using gold as catalyst droplet, silane as precursor and diborane as dopant reactant and are analyzed at the atomic scale using the three dimensional laser assisted Atom Probe Tomography (APT…

Nanotechnology 2010 Advanced Materials, CNTs, Particles, Films and Composites - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Jun 2010, Anaheim, CA, United States. pp.29-32. ⟨hal-01953261⟩

• Article dans une revue

Low-temperature scanning tunneling microscopy study of self-assembled InAs quantum dots grown by droplet epitaxy

Corentin Durand, A. Peilloux, K. Suzuki, K. Kanisawa, B. Grandidier, K. Muraki

Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known Stranski-Krastanow mode and the more recently studied droplet epitaxy mode. We show…

Physics Procedia, 2010, Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems, 3 (2), pp.1299-1304. ⟨10.1016/j.phpro.2010.01.180⟩. ⟨hal-00568565⟩

• Article dans une revue

Low-frequency surface plasmon excitations in multicoaxial negative-index metamaterial cables

M.S. Kushwaha, Bahram Djafari-Rouhani

By using an elegant response function theory, which does not require matching of the messy boundary conditions, we investigate the surface plasmon excitations in the multicoaxial cylindrical cables made up of negative-index metamaterials. The multicoaxial cables with dispersive metamaterial…

Journal of the Optical Society of America B, 2010, 27, pp.605-610. ⟨10.1364/JOSAB.27.000605⟩. ⟨hal-00549077⟩

• Article dans une revue

Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate

David Guérin, S. Lenfant, S. Godey, D. Vuillaume

Journal of Materials Chemistry, 2010, 20, pp.2680-2690. ⟨10.1039/b924255d⟩. ⟨hal-00548971⟩

• Communication dans un congrès

Patterned hard magnetic L10 FePt for frequency tunable millimeter-wave planar antennas

S. Hage-Ali, Yannick Dusch, Nicolas Tiercelin, P. Coquet, R. Sauleau, Vladimir Preobrazhensky, Philippe Pernod

55th Annual Conference on Magnetism and Magnetic Materials, MMM 2010, 2010, Atlanta, GA, United States. ⟨hal-00808184⟩

• Communication dans un congrès

Microwave power capabilities of InAlN/GaN HEMTs

Jean-Claude de Jaeger, Christophe Gaquière, Y. Douvry, N. Defrance, Virginie Hoel, S.L. Delage, M.A. Di Forte-Poisson, N. Sarazin, E. Morvan, M. Alomari, E. Kohn, A. Dussaigne, J.F. Carlin, C. Ostermaier, J. Kuzmik, D. Pogany

18th International Conference on Microwave, Radar and Wireless Communications, MIKON-2010, 2010, Vilnius, Lithuania. pp.324-327. ⟨hal-00800883⟩

• Article dans une revue

Electronic structure and radial breathing mode for carbon nanotubes with ultra-high curvature

W. Plank, R. Pfeiffer, C. Scharman, L. Wirtz, M. Calvaresi, F. Zerbetto, J. Meyer, H. Kuzmany

physica status solidi (b), 2010, 247, pp.2774-2778. ⟨10.1002/pssb.201000357⟩. ⟨hal-00800832⟩

• Article dans une revue

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

S.R. Plissard, K.A. Dick, X. Wallart, P. Caroff

Applied Physics Letters, 2010, 96, pp.121901-1-3. ⟨10.1063/1.3367746⟩. ⟨hal-00548716⟩

• Article dans une revue

Graphene growth by molecular beam epitaxy on the carbon-face of SiC

E. Moreau, S. Godey, F.J. Ferrer, D. Vignaud, X. Wallart, J. Avila, M.C. Asensio, F. Bournel, J.J. Gallet

Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC…

Applied Physics Letters, 2010, 97 (24), pp.241907. ⟨10.1063/1.3526720⟩. ⟨hal-00548720⟩