Publications

• Article dans une revue

Optimization of SiNX:H films deposited by PECVD for reliability of electronic, microsystems and optical applications

E. Herth, Bernard Legrand, L. Buchaillot, N. Rolland, T. Lasri

Microelectronics Reliability, 2010, 50, pp.1103-1106. ⟨10.1016/j.microrel.2010.04.011⟩. ⟨hal-00549491⟩

• Article dans une revue

Quasi-monolithic heat flux microsensor based on porous silicon boxes

K. Ziouche, P. Godts, Z. Bougrioua, C. Sion, T. Lasri, D. Leclercq

Sensors and Actuators A: Physical , 2010, 164, pp.35-40. ⟨10.1016/j.sna.2010.09.015⟩. ⟨hal-00549493⟩

• Article dans une revue

Coupled reverberation chambers for emulating MIMO channels

O. Delangre, P. de Doncker, M. Lienard, Pierre Degauque

Comptes Rendus. Physique, 2010, 11, pp.30-36. ⟨10.1016/j.crhy.2009.11.002⟩. ⟨hal-00549474⟩

• Article dans une revue

Perfectly (001)- and (111)-oriented (Ba,Sr)TiO3 thin films sputtered on Pt/TiOx/SiO2/Si without buffer layers

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.350-352. ⟨10.1111/j.1551-2916.2009.03427.x⟩. ⟨hal-00549519⟩

• Communication dans un congrès

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

G. Moschetti, P.A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.321-324, ⟨10.1109/ICIPRM.2010.5516313⟩. ⟨hal-00549956⟩

• Communication dans un congrès

Digital compensation of the power amplifier nonlinearities at relay station receivers in 802.16j very high data rate systems

J. Zeleny, P. Rosson, C. Dehos, A. Kaiser

IEEE Radio and Wireless Symposium, RWS 2010, 2010, United States. pp.244-247, ⟨10.1109/RWS.2010.5434157⟩. ⟨hal-00549975⟩

• Communication dans un congrès

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

N. Malbert, N. Labat, A. Curutchet, C. Sury, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, Y. Douvry, C. Dua, M. Oualli, M. Piazza, C. Bru-Chevallier, J.M. Bluet, W. Chikhaoui

IEEE International Reliability Physics Symposium, IRPS 2010, 2010, United States. pp.139-145, ⟨10.1109/IRPS.2010.5488839⟩. ⟨hal-00550009⟩

• Article dans une revue

Enhanced high data rate communication system using embedded cooperative radar for intelligent transports systems

Yassin El Hillali, C. Tatkeu, P. Deloof, Laila Sakkila, Atika Rivenq, Jean-Michel Rouvaen

Transportation research. Part C, Emerging technologies, 2010, 18, pp.429-439. ⟨10.1016/j.trc.2009.05.013⟩. ⟨hal-00549912⟩

• Communication dans un congrès

325 GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology

F. Gianesello, R. Pilard, Sylvie Lepilliet, N. Waldhoff, C. Durand, S. Boret, B. Martineau, Gilles Dambrine, D. Gloria, B. Rauber, C. Raynaud

40th European Microwave Conference, EuMC 2010, 2010, France. pp.57-60. ⟨hal-00549919⟩

• Communication dans un congrès

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and…

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩