Publications

• Autre publication scientifique

Conception et réalisation technologique de transistors de la filière HEMTs AlGaN/GaN sur substrat silicium pour l'amplification de puissance hyperfréquence

Jean-Claude Gerbedoen

2009. ⟨hal-00572806⟩

• Communication dans un congrès

Tip-matter interaction measurements using MEMS ring resonators

Emmanuelle Algre, Bernard Legrand, Marc Faucher, Benjamin Walter, Lionel Buchaillot

Forum des Microscopies à Sonde Locale, 2009, Hardelot, France. ⟨hal-00575264⟩

• Communication dans un congrès

Tip-matter interaction measurements using MEMS ring resonators

Emmanuelle Algre, Bernard Legrand, Marc Faucher, Benjamin Walter, Lionel Buchaillot

We have previously reported on a new concept of Atomic Force Microscope (AFM) probes using bulk-mode silicon resonators [1]. We report here measurements of interaction between a surface and the vibrating tip of the resonator. In particular, the tip oscillation amplitude versus the probe-sample…

15th International Conference on Solid State Sensors, Actuators and Microsystems, Transducers 2009, Jun 2009, Denver, CO, United States. pp.1638-1641, ⟨10.1109/SENSOR.2009.5285774⟩. ⟨hal-00474451⟩

• Communication dans un congrès

TOSCANE : TOwards SCalable Audiovisual Communication Networks

O. Salem, L. Carminati, A. Senoussaoui, E. Renan, A.S. Bacquet, Patrick Corlay, François-Xavier Coudoux, Christophe Deknudt, Marc G. Gazalet, Mohamed Gharbi, Marie Zwingelstein, M. Guarisco, H. Rabah, Y. Berviller, Sébastien J. Weber

IEEE Global Information Infrastructure Symposium, GIIS 2009, 2009, Tunisia. pp.1-6, ⟨10.1109/GIIS.2009.5307043⟩. ⟨hal-00474153⟩

• Article dans une revue

Analysis of the high-frequency performance of InGaAs/InAlAs nanojunctions using a three-dimensional Monte Carlo simulator

T. Sadi, Jean-Luc Thobel

We report results from the investigation of the intrinsic high-frequency (HF) behavior of three-terminal junctions based on InGaAs∕InAlAs heterostructures, using a well-calibrated three-dimensional semiclassical ensemble Monte Carlo simulation model. The simulator incorporates a more realistic…

Journal of Applied Physics, 2009, 106 (8), pp.083709. ⟨10.1063/1.3248358⟩. ⟨hal-00473654⟩

• Article dans une revue

Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors

I. Saidi, M. Gassoumi, H. Maaref, H. Mejri, Christophe Gaquière

Journal of Applied Physics, 2009, 106, pp.054511-1-7. ⟨10.1063/1.3202317⟩. ⟨hal-00473632⟩

• Article dans une revue

Confined and guided catalytic growth of crystalline silicon films on a dielectric substrate

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, P. Coronel, T. Skotnicki, D. Delille, C. Maurice, David Troadec

This paper presents the synthesis of epitaxial silicon (Si) nanoblades of controlled dimensions (thickness 50nm, width 200nm to 2μm) obtained by catalytic growth in a tunnel of confinement. The fabrication of horizontal cavities containing the catalyst slug is first described to show how the tunnel…

IOP Conference Series: Materials Science and Engineering, 2009, Semiconductor Nanostructures Towards Electronic and Optoelectronic Device Applications II (Symposium K, E-MRS 2009 Spring Meeting) 8–12 June 2009, Strasbourg, France, 6, pp.012022. ⟨10.1088/1757-899X/6/1/012022⟩. ⟨hal-00471991⟩

• Article dans une revue

Size-dependent optical properties of colloidal PbS quantum dots

Iwan Moreels, Karel Lambert, Dries Smeets, David de Muynck, Tom Nollet, José C Martins, Frank Vanhaecke, Andre Vantomme, Christophe Delerue, Guy Allan, Zeger Hens

We quantitatively investigate the size-dependent optical properties of colloidal PbS nanocrystals or quantum dots (Qdots), by combining the Qdot absorbance spectra with detailed elemental analysis of the Qdot suspensions. At high energies, the molar extinction coefficient ε increases with the Qdot…

ACS Nano, 2009, 3, pp.3023-3030. ⟨10.1021/nn900863a⟩. ⟨hal-00473363⟩

• Communication dans un congrès

Field-induced vortices in weakly anisotropic ferroelectrics

A. Sené, Igor A. Luk'Yanchuk, L. Baudry, L. Lahoche

21st International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2 2009, 2009, Colorado Springs, CO, United States. ⟨hal-00575712⟩

• Communication dans un congrès

Caractérisation de défauts atomiques uniques dans un semiconducteur

B. Grandidier

Journées Nanomicrotechnologies : Surfaces et nanostructures - Analyses, mesures et modélisations, 2009, Paris, France. ⟨hal-00575341⟩