Publications

• Article dans une revue

LP MOCVD growth of InAlN/GaN HEMT heterostructure : comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

M.A. Di Forte-Poisson, N. Sarazin, M. Magis, M. Tordjman, J. Di Persio, R. Langer, E. Iliopoulos, A. Georgakilas, P. Kominou, M. Guziewicz, E. Kaminska, A. Piotrowska, Christophe Gaquière, M. Oualli, E. Chartier, E. Morvan, S. Delage

Physica Status Solidi C: Current Topics in Solid State Physics, 2010, 7, pp.1317-1324. ⟨10.1002/pssc.200983114⟩. ⟨hal-00549909⟩

• Article dans une revue

Perfectly (001)- and (111)-oriented (Ba,Sr)TiO3 thin films sputtered on Pt/TiOx/SiO2/Si without buffer layers

L.H. Yang, G.S. Wang, X.L. Dong, Denis Remiens

Journal of the American Ceramic Society, 2010, 93, pp.350-352. ⟨10.1111/j.1551-2916.2009.03427.x⟩. ⟨hal-00549519⟩

• Article dans une revue

Quasi-monolithic heat flux microsensor based on porous silicon boxes

K. Ziouche, P. Godts, Z. Bougrioua, C. Sion, T. Lasri, D. Leclercq

Sensors and Actuators A: Physical , 2010, 164, pp.35-40. ⟨10.1016/j.sna.2010.09.015⟩. ⟨hal-00549493⟩

• Article dans une revue

Optimization of SiNX:H films deposited by PECVD for reliability of electronic, microsystems and optical applications

E. Herth, Bernard Legrand, L. Buchaillot, N. Rolland, T. Lasri

Microelectronics Reliability, 2010, 50, pp.1103-1106. ⟨10.1016/j.microrel.2010.04.011⟩. ⟨hal-00549491⟩

• Article dans une revue

An efficient speech recognition system in adverse conditions using the nonparametric regression

A. Amrouche, M. Debyeche, Abdelmalik Taleb-Ahmed, Jean-Michel Rouvaen, M.C.E. Yagoub

Engineering Applications of Artificial Intelligence, 2010, 23, pp.85-94. ⟨10.1016/j.engappai.2009.09.006⟩. ⟨hal-00549462⟩

• Article dans une revue

Analysis of deep levels in AlGaN/GaN/Al2O3 heterostructures by CDLTS under a gate pulse

M. Gassoumi, O. Fathallah, Christophe Gaquière, H. Maaref

Physica B: Condensed Matter, 2010, 405, pp.2337-2339. ⟨10.1016/j.physb.2010.02.042⟩. ⟨hal-00549453⟩

• Article dans une revue

Further studies on the lithium phosphorus oxynitride solid electrolyte

T. Pichonat, C. Lethien, Nicolas Tiercelin, S. Godey, E. Pichonat, P. Roussel, Marie Colmont, P.A. Rolland

First step in the way to the fabrication of an all-solid microbattery for autonomous wireless sensor node, amorphous thin solid films of lithium phosphorus oxynitride (LiPON) were prepared by radio-frequency sputtering of a mixture target of P₂O₅/Li<…

Materials Chemistry and Physics, 2010, 123, pp.231 - 235. ⟨10.1016/j.matchemphys.2010.04.001⟩. ⟨hal-00514193⟩

• Communication dans un congrès

Slow-wave shielded coplanar striplines for UWB filtering applications

M. Abdelaziz, Florence Podevin, A. Safwat, Anne-Laure Franc, Emmanuel Pistono, N. Corrao, A. Vilcot, P. Ferrari

Slow-wave shielded coplanar striplines for UWB filtering applications, Dec 2009, New Delhi, India. ⟨hal-00602887⟩

• Thèse

Study of electronic properties of nanostructures by ultrahigh vacuum atomic force microscopy, Étude de propriétés électroniques de nanostructures par microscopie à force atomique sous ultra-vide

Lukasz Borowik

We study the electronic properties of nanostructures using atomic force microscopy in ultra-high vacuum environment. The first part of this work consists in the characterization of silicon nanowires grown by metal-catalyzed chemical vapour deposition on silicon substrates, using conducting atomic…, Cette thèse est consacrée à l'étude des propriétés électroniques de nanostructures par microscopie à force atomique (AFM) en ultra-vide. La première partie de ce travail a consisté à caractériser localement des nanofils de silicium par technique d'AFM conducteur. Les expériences de…

Physics [physics]. Université des Sciences et Technologie de Lille - Lille I, 2009. English. ⟨NNT : ⟩. ⟨tel-00466670⟩

• Article dans une revue

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

Jinquan Cheng, Thomas Aviles, Ahiram El Akra, C. Bru-Chevallier, Ludovic Largeau, Gilles Patriarche, Philippe Regreny, A. Benamrouche, Y. Robach, Guy Hollinger, Guillaume Saint-Girons

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of nonradiative mechanisms for…

Applied Physics Letters, 2009, 95 (23), ⟨10.1063/1.3273850⟩. ⟨hal-01901801⟩