Publications

Affichage de 10361 à 10370 sur 16273


  • Article dans une revue

Influence of the selectively implanted collector integration on 400 GHz fmax Si/SiGe:C HBTs

Thomas Lacave, Pascal Chevalier, Yves Campidelli, Linda Depoyan, Ludovic Berthier, Frédéric André, Michel Buczko, Gregory Avenier, Christophe Gaquière, Alain Chantre

Optimization of SiGe HBT performances towards very high cut-off frequencies fT and fMAX requires high collector doping level together with low collector/base junction capacitance CBC. This compromise is usually achieved by localizing a dedicated collector implant (so-called SIC implant) under the…

ECS Transactions, 2010, 33 (6), pp.331-335. ⟨10.1149/1.3487563⟩. ⟨hal-00550006⟩

  • Communication dans un congrès

[Invited] Conducting IPNs based electrochemical actuators : from polymer chemistry to biomimetic integration

F. Vidal, Cedric Plesse, Alexandre Khaldi, N. Festin, P. Pirim, Eric Cattan, D. Teyssie, C. Chevrot

Stuttgart NanoDays 2010, 2010, Stuttgart, Germany. ⟨hal-00909175⟩

  • Communication dans un congrès

Slow-wave shielded coplanar striplines for UWB filtering applications

M. Abdelaziz, Florence Podevin, A. Safwat, Anne-Laure Franc, Emmanuel Pistono, N. Corrao, A. Vilcot, P. Ferrari

Slow-wave shielded coplanar striplines for UWB filtering applications, Dec 2009, New Delhi, India. ⟨hal-00602887⟩

  • Article dans une revue

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

Jinquan Cheng, Thomas Aviles, Ahiram El Akra, C. Bru-Chevallier, Ludovic Largeau, Gilles Patriarche, Philippe Regreny, A. Benamrouche, Y. Robach, Guy Hollinger, Guillaume Saint-Girons

The optical properties of an InAsP/InP quantum well grown on a SrTiO3(001) substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of nonradiative mechanisms for…

Applied Physics Letters, 2009, 95 (23), ⟨10.1063/1.3273850⟩. ⟨hal-01901801⟩

  • Communication dans un congrès

Terahertz imaging using high electron mobility transistors as plasma wave detectors

S. Nadar, D. Coquillat, M. Sakowicz, H. Videlier, F. Teppe, N. Dyakonova, W. Knap, J.-M. Peiris, J. Lyonnet, D. Seliuta, I. Kasalynas, G. Valusis, K. Madjour, Didier Theron, Christophe Gaquière, M.-A. Poisson

Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are…

15th International Semiconducting and Insulating Materials Conference (SIMC-XV) Vilnius Univ, Vilnius, LITHUANIA, Jun 2009, Lithuania. pp.2855-2857, ⟨10.1002/PSSC.200982532⟩. ⟨hal-00545979⟩