Publications

Affichage de 10381 à 10390 sur 16106


  • Article dans une revue

Phase-shift, refraction and focusing based on the metamaterial technologies

D. Lippens

Comptes Rendus. Physique, 2009, 10, pp.400-413. ⟨10.1016/j.crhy.2009.01.003⟩. ⟨hal-00471882⟩

  • Article dans une revue

Indoor coverage improvement of MB-OFDM UWB signals with radio over POF

C. Lethien, Christophe Loyez, Jean-Pierre Vilcot, Laurent Clavier, Michael Bocquet, P.A. Rolland

Optics Communications, 2009, 282, pp.4706-4715. ⟨10.1016/j.optcom.2009.09.021⟩. ⟨hal-00471849⟩

  • Article dans une revue

Interaction of Lamb waves with a grating composed of two spatial periodicities : study in dual space

D. Leduc, B. Morvan, Anne-Christine Hladky, J.L. Izbicki

NDT & E International, 2009, 42, pp.513-517. ⟨10.1016/j.ndteint.2009.02.008⟩. ⟨hal-00469051⟩

  • Article dans une revue

Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate

M. Gassoumi, J.M. Bluet, Christophe Gaquière, G. Guillot, H. Maaref

Microelectronics Journal, 2009, 40, pp.1161-1165. ⟨10.1016/j.mejo.2007.02.005⟩. ⟨hal-00473430⟩

  • Article dans une revue

Cold plasma functionalized terahertz BioMEMS for enzyme reaction analysis

Abdennour Abbas, A. Treizebre, Philippe Supiot, Nour Eddine Bourzgui, Didier Guillochon, Dominique Vercaigne-Marko, Bertrand Bocquet

In this paper, we describe the development, functionalization and functionality testing of a TeraHertz (THz) Bio-MicroElectroMechanical System (BioMEMS) dedicated to enzyme reaction analysis. The microdevice was fabricated by mixing clean room microfabrication with cold plasma deposition. The first…

Biosensors and Bioelectronics, 2009, 25, pp.154-160. ⟨10.1016/j.bios.2009.06.029⟩. ⟨hal-00471814⟩

  • Article dans une revue

Physical analysis of thermal effects on the optimization of GaN Gunn diodes

Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger

Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩

  • Article dans une revue

InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn

IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩

  • Article dans une revue

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski

Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩

  • Article dans une revue

Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩

  • Article dans une revue

Study of the high-frequency performance of III-As nanojunctions using a three-dimensional ensemble Monte Carlo model

T. Sadi, Jean-Luc Thobel

Journal of Physics: Conference Series, 2009, 193, pp.012017-1-4. ⟨10.1088/1742-6596/193/1/012017⟩. ⟨hal-00473657⟩