Publications

• Article dans une revue

Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals : role of defects

Guy Allan, Christophe Delerue

We present calculations predicting that defects at the surface of semiconductor nanocrystals have a strong influence on the dynamics of hot carriers after photoexcitation. The relaxation of excited carriers by impact ionization of carriers trapped on deep levels is efficient, in particular in the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.195324-1-5. ⟨10.1103/PhysRevB.79.195324⟩. ⟨hal-00473094⟩

• Article dans une revue

Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy

David Brunel, D. Deresmes, Thierry Melin

We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete…

Applied Physics Letters, 2009, 94, pp.223508-1-3. ⟨10.1063/1.3148364⟩. ⟨hal-00473086⟩

• Article dans une revue

Comment on "Size-dependent composition and molar extinction coefficient of PbSe semiconductor nanocrystals

Iwan Moreels, Karel Lambert, David de Muynck, Frank Vanhaecke, Dirk Poelman, José C Martins, Guy Allan, Zeger Hens

Comment on "Size-dependent composition and molar extinction coefficient of PbSe semiconductor nanocrystals". ACS Nano, 2009, 3, pp.2053. ⟨10.1021/nn9005363⟩. ⟨hal-00473074⟩

• Article dans une revue

Ultracompact optical filter based on a stub resonator in GaInAsP/InP optical wire technology

Sophie Maricot, Marie Lesecq, Jean-Pierre Vilcot, Christiane Legrand, Marc François, Maxime Beaugeois

Optics Letters, 2009, 34, pp.1936-1938. ⟨10.1364/OL.34.001936⟩. ⟨hal-00473045⟩

• Communication dans un congrès

Application de la méthode des différences finies (FDTD) pour la modélisation du SAR dans les tissus biologiques

S. Kassimi, S. Bri, M. Habibi, A. Mamouni

TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Maroc. pp.C1-1, 1-4. ⟨hal-00573518⟩

• Communication dans un congrès

Evaluation des effets d'exposition des téléphones cellulaires sur la tête humaine

S. Bri, O. Benzaim, A. Mamouni

TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Maroc. pp.B1-5, 1-4. ⟨hal-00573517⟩

• Communication dans un congrès

Interférométrie THz pour applications en biologie

Vianney Mille, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet

16èmes Journées Nationales Microondes, JNM 2009, May 2009, Grenoble, France. pp.5F-22, 1-3. ⟨hal-00573532⟩

• Communication dans un congrès

Un radar ULB basé sur les statistiques d'ordres supérieurs pour la détection d'obstacles routiers

Laila Sakkila, Atika Rivenq, Yassin El Hillali, C. Tatkeu, A. El Abed

TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Maroc. pp.F2, 1-4. ⟨hal-00573510⟩

• Article dans une revue

In-plane polarities of nonpolar wurtzite epitaxial films deposited on m- and r-plane sapphire substrates

Philippe Vennéguès, Tiankai Zhu, Z. Bougrioua, Denis Martin, J. Zuniga-Perez, Nicolas Grandjean

The in-plane polarities of GaN and ZnO non-polar films deposited on r - and m-sapphire are compared. The polarity is unique on r-sapphire and mixed on m-sapphire because the direction on the substrate surface parallel to the wurztite c-direction is polar in the first case and nonpolar in the second…

Japanese Journal of Applied Physics Part 1: Regular Papers and Short Notes and Review Papers, 2009, 48 (9), pp.090211-1-3. ⟨10.1143/JJAP.48.090211⟩. ⟨hal-00472455⟩

• Communication dans un congrès

A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Maciej Sakowicz, Jerzy Łusakowski, Krzysztof Karpierz, Marian Grynberg, Wojciech Gwarek, Stephane Boubanga Tombet, Dominique Coquillat, Wojciech Knap, Andrey Shchepetov, S. Bollaert

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency…

29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩. ⟨hal-00545966⟩