Publications

• Communication dans un congrès

Investigation of SiGe HBT potentialities under cryogenic temperature

N. Waldhoff, Francois Danneville, Gilles Dambrine, B. Geynet, P. Chevalier

39th European Solid-State Device Research Conference, ESSDERC 2009, 2009, Greece. pp.121-124, ⟨10.1109/ESSDERC.2009.5331374⟩. ⟨hal-00474098⟩

• Communication dans un congrès

Plasmonic waveguides and metamaterial components at terahertz frequencies

Tahsin Akalin, Willie J. Padilla

The electromagnetic field around a planar plasmonic waveguide can be used for the study of single metamaterial components such as single or double split ring resonators (SRR). The resonances in the terahertz (THz) frequency range of these devices will be studied with planar waveguides. We have…

Asia Pacific Microwave Conference, APMC 2009, Dec 2009, Singapore, Singapore. pp.2444-2446, ⟨10.1109/APMC.2009.5385481⟩. ⟨hal-00474426⟩

• Communication dans un congrès

Physical-thermal modelling of GaN Gunn oscillations

Xing Tang, Michel Rousseau, Jean-Claude de Jaeger

4th European Microwave Integrated Circuits Conference, EuMIC 2009, 2009, Italy. pp.168-171. ⟨hal-00474493⟩

• Communication dans un congrès

Terahertz plasmonic antennas for quantum cascade lasers

Tahsin Akalin, Wilfried Maineult, Pierre Gellie, Emilien Peytavit, Alessio Andronico, Pascal Filloux, Giuseppe Leo, Jean-Francois Lampin, Carlo Sirtori, Harvey E. Beere, David Ritchie, Stefano Barbieri

Quantum Cascade Lasers (QCL) are probably the most promising sources for Terahertz wave generation. The key issue especially for double metal QCLs is the extraction and the beam shaping of the emitted power. We propose a solution with a TEM-Horn Antenna and we compare it to the most recently…

Asia Pacific Microwave Conference, APMC 2009, Dec 2009, Singapour, Singapore. pp.183-185, ⟨10.1109/APMC.2009.5385404⟩. ⟨hal-00474429⟩

• Communication dans un congrès

Thermoelastic FEM-BEM model for MEMS resonator simulation

D. Ekeom, L. Buchaillot

22nd IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2009, 2009, Italy. pp.923-926, ⟨10.1109/MEMSYS.2009.4805535⟩. ⟨hal-00474450⟩

• Communication dans un congrès

InAlN/GaN heterostructures for microwave power and beyond

E. Kohn, M. Alomari, A. Denisenko, M. Dipalo, D. Maier, F Medjdoub, C. Pietzka, S. Delage, M.A. Di Forte-Poisson, E. Morvan, N. Sarazin, J.C. Jacquet, C. Dua, J.F. Carlin, N. Grandjean, M. Py, M. Gonschorek, J. Kuzmik, D. Pogany, G. Pozzovivo, C. Ostermaier, L. Toth, B. Pecz, Jean-Claude de Jaeger, Christophe Gaquière, K. Cico, K. Fröhlich, A. Kermaidis, E. Iliopoulos, G. Konstantinidis, C. Giessen, M. Heuken, B. Schineller

International Electron Devices Meeting, IEDM 2009, 2009, United States. pp.1-4, ⟨10.1109/IEDM.2009.5424395⟩. ⟨hal-00474463⟩

• Article dans une revue

Assessment of carrier-multiplication efficiency in bulk PbSe and PbS

Joep J. H. Pijpers, Ronald Ulbricht, Klaas-Jan Tielrooij, A. Osherov, Y. Golan, Christophe Delerue, Guy Allan, Mischa Bonn

One of the important factors limiting solar-cell efficiency is that incident photons generate one electron–hole pair, irrespective of the photon energy. Any excess photon energy is lost as heat. The possible generation of multiple charge carriers per photon (carrier multiplication) is therefore of…

Nature Physics, 2009, 5, pp.811-814. ⟨10.1038/nphys1393⟩. ⟨hal-00473076⟩

• Article dans une revue

Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩

• Article dans une revue

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski

Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩

• Article dans une revue

UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET

Dmitri Yarekha, G. Larrieu, N. Breil, Emmanuel Dubois, S. Godey, X. Wallart, Caroline Soyer, Denis Remiens, N. Reckinger, Xing Tang, A. Laszcz, J. Ratajczak, A. Halimaoui

ECS Transactions, 2009, 19, pp.339-344. ⟨10.1149/1.3118961⟩. ⟨hal-00471999⟩