Publications

Affichage de 10831 à 10840 sur 16098


  • Article dans une revue

High frequency ultrasonic detection of C-crack defects in silicon nitride bearing balls

F. Deneuville, Marc Duquennoy, Mohammadi Ouaftouh, Mohamed Ourak, Frédéric Jenot, S. Desvaux

Ultrasonics, 2009, 49, pp.89-93. ⟨10.1016/j.ultras.2008.06.010⟩. ⟨hal-00473716⟩

  • Article dans une revue

Use of the circuit approach to solve large EMC problems

S. Leman, B. Demoulin, O. Maurice, M. Cauterman, P. Hoffmann

Comptes Rendus. Physique, 2009, 10, pp.70-82. ⟨10.1016/j.crhy.2009.01.006⟩. ⟨hal-00473696⟩

  • Article dans une revue

MMICs time-domain electrical physical simulator adapted to the parallel computation

A. El Moussati, Jean-Claude de Jaeger, Christophe Dalle

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2009, 22, pp.279-296. ⟨10.1002/jnm.706⟩. ⟨hal-00473652⟩

  • Article dans une revue

Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns

Yvon Cordier, Fabrice Semond, Jean-Christophe Moreno, Éric Frayssinet, Brahim Benbakhti, Z. Cao, Sébastien Chenot, Lee Nguyen, Olivier Tottereau, Ali Soltani, Karine Blary

In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.

Materials Science in Semiconductor Processing, 2009, 12, pp.16-20. ⟨10.1016/j.mssp.2009.07.003⟩. ⟨hal-00473644⟩

  • Article dans une revue

Light polarized resonant Raman spectra from individual single- and double-wall carbon nanotubes

Jaroslaw Judek, David Brunel, Thierry Melin, Marcin Marczak, Mariusz Zdrojek, Wojciech Gȩbicki, Leszek Adamowicz

Measured light polarization dependent resonant Raman spectra from spatially isolated semiconducting single- and double-wall carbon nanotubes are reported. Most of the observed modes intensities exhibit two or fourfold symmetry, for VV and VH configuration, respectively. Weak quantitative changes in…

Physica Status Solidi C: Current Topics in Solid State Physics, 2009, 6, pp.2056-2059. ⟨10.1002/pssc.200881757⟩. ⟨hal-00473404⟩

  • Article dans une revue

The inter-modes mixing effects in mode group diversity multiplexing

M. Awad, Iyad Dayoub, A. Okassa M'Foubat, Jean-Michel Rouvaen

Optics Communications, 2009, 282, pp.3908-3917. ⟨10.1016/j.optcom.2009.06.065⟩. ⟨hal-00471836⟩

  • Article dans une revue

CO2 laser-induced crystallization of sol-gel-derived indium tin oxide films

X.Y. Tao, I. Fsaifes, V. Koncar, C. Dufour, C. Lepers, L. Hay, B. Capoen, M. Bouazaoui

Applied physics. A, Materials science & processing, 2009, 96, pp.741-749. ⟨10.1007/s00339-009-5157-7⟩. ⟨hal-00472769⟩

  • Article dans une revue

Parallel interference cancellation in DS-CDMA optical networks using bias compensation

A. Okassa M'Foubat, Iyad Dayoub, Jean-Michel Rouvaen, Y. Zouine

European Transactions on Telecommunications, 2009, 20, pp.564-571. ⟨10.1002/ett.1358⟩. ⟨hal-00471835⟩

  • Communication dans un congrès

SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in mmW range 60-110 GHz

Y. Tagro, D. Gloria, S. Boret, Sylvie Lepilliet, Gilles Dambrine

IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2009, 2009, Capri, Italy. pp.83-86, ⟨10.1109/BIPOL.2009.5314138⟩. ⟨hal-00800905⟩

  • Communication dans un congrès

Metallic source/drain for advanced MOS architectures : from material engineering to device integration

Emmanuel Dubois, G. Larrieu, N. Breil, R. Valentin, Francois Danneville, Dmitri Yarekha, N. Reckinger, Xing Tang, A. Halimaoui, R. Rengel, E. Pascual, A. Pouydebasque, X. Wallart, S. Godey, J. Ratajczak, A. Laszcz, J. Katcki, J.P. Raskin, Gilles Dambrine, A. Cros, T. Skotnicki

SINANO-NANOSIL Workshop, Silicon-based CMOS and Beyond-CMOS Nanodevices, 2009, Athens, Greece. ⟨hal-00575267⟩