Publications

• Article dans une revue

Recent progress in high-speed silicon-based optical modulators [Invited paper]

D. Marris-Morini, L. Vivien, G. Rasigade, J.M. Fedeli, E. Cassan, Xavier Le Roux, P. Crozat, S. Maine, A. Lupu, P. Lyan, P. Rivallin, Mathieu Halbwax, S. Laval

Proceedings of the IEEE, 2009, 97, pp.1199-1215. ⟨10.1109/JPROC.2009.2015337⟩. ⟨hal-00473046⟩

• Article dans une revue

Synthesis and luminescence properties of (N-Doped) ZnO nanostructures from a dimethylformamide aqueous solution

B. Sieber, Hong Liu, G. Piret, J. Laureyns, P. Roussel, B. Gelloz, Sabine Szunerits, Rabah Boukherroub

The paper reports on the optical properties of ZnO nanostructures elaborated on a zinc foil substrate by a simple chemical approach. The doping type and density of the ZnO nanostructures were evaluated using electrochemical impedance spectroscopy. XRD diffraction patterns and Raman spectroscopy…

Journal of Physical Chemistry C, 2009, 113, pp.13643-13650. ⟨10.1021/jp903504w⟩. ⟨hal-00412954⟩

• Article dans une revue

A 60 GHz six-port distance measurement system with sub-millimeter accuracy

Kamel Haddadi, M.M. Wang, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.644-646. ⟨10.1109/LMWC.2009.2029744⟩. ⟨hal-00472454⟩

• Article dans une revue

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

V.G. Dubrovskii, N.V. Sibirev, G.E. Cirlin, I.P. Soshnikov, W.H. Chen, R. Larde, E. Cadel, P. Pareige, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, M. Moewe, L.C. Chuang, C. Chang-Hasnain

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.205316-1-7. ⟨10.1103/PhysRevB.79.205316⟩. ⟨hal-00473095⟩

• Proceedings/Recueil des communications

Riflessioni sulla geometria nella teoria della relatività. (Reflections on geometry in the theory of relativity)

Raffaele Pisano, Ferdinando Casolaro

• Article dans une revue

Arsenic-segregated rare earth silicide junctions : reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, N. Breil, Olivier Faynot

As an attempt to considerably reduce the equivalent contact resistivity of Schottky junctions, this letter studies the integration of rare-earth silicides, known to feature the lowest Schottky barriers (SBs) to electrons, coupled with a dopant segregation based on arsenic (As$^+$) implantation.…

IEEE Electron Device Letters, 2009, 30 (12), pp.1266-1268. ⟨10.1109/LED.2009.2033085⟩. ⟨hal-00471974⟩

• Communication dans un congrès

Potentialités de la technologie CMOS 65nm sur substrat SOI haute résistivité pour les applications millimétriques : amplificateur faible bruit et antenne intégrés sur un même substrat

R. Pilard, D. Gloria, Christian Person, François Le Pennec, F. Gianesello, N. Waldhoff

16èmes Journées Nationales Microondes, JNM 2009, 2009, France. pp.2E-1, 1-4. ⟨hal-00480319⟩

• Article dans une revue

Left Hand dispersion of a stack of sub-wavelength hole metal arrays at terahertz frequencies

Charles Croënne, F. Garet, Eric Lheurette, J.-L. Coutaz, D. Lippens

Applied Physics Letters, 2009, 94, pp.133112. ⟨hal-00597580⟩

• Article dans une revue

Mie resonance-based dielectric metamaterials

Q. Zhao, J. Zhou, F. Zhang, D. Lippens

Increasing attention on metamaterials has been paid due to their exciting physical behaviors and potential applications. While most of such artificial material structures developed so far are based on metallic resonant structures, Mie resonances of dielectric particles open a simpler and more…

Materials Today, 2009, 12, pp.60-69. ⟨10.1016/S1369-7021(09)70318-9⟩. ⟨hal-00471883⟩

• Communication dans un congrès

Vortices and ferroelectric switching dynamics

Anaïs Sené, Igor A. Luk'Yanchuk, Laurent Baudry, Laurent Lahoche

2nd International Meeting on Materials for Electronic Applications, IMMEA 2009, 2009, Hammamet, Tunisia. ⟨hal-00575711⟩