Publications

• Article dans une revue

Self-assembled monolayers for electrode fabrication and efficient threshold voltage control of organic transistors

C. Celle, C. Suspene, J.P. Simonato, S. Lenfant, M. Ternisien, D. Vuillaume

Organic Electronics, 2009, 10, pp.119-126. ⟨10.1016/j.orgel.2008.10.007⟩. ⟨hal-00472766⟩

• Article dans une revue

Al and Ti/Al contacts on n-GaN

L. Dobos, B. Pecz, L. Toth, Z.J. Horvath, Z.E. Horvath, E. Horvath, A. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2009, 84, pp.228-230. ⟨10.1016/j.vacuum.2009.04.022⟩. ⟨hal-00472682⟩

• Article dans une revue

Orientation control of LaNiO3 thin films by RF magnetron sputtering with different oxygen partial pressure

L.H. Yang, G.S. Wang, C.L. Mao, Y.Y. Zhang, R.H. Liang, Caroline Soyer, Denis Remiens, X.L. Dong

Journal of Crystal Growth, 2009, 311, pp.4241-4246. ⟨10.1016/j.jcrysgro.2009.05.025⟩. ⟨hal-00473732⟩

• Article dans une revue

A reduction modeling method to assess the electromagnetic emission of multiconductor transmission lines

Guillaume Andrieu, X. Bunlon, J.P. Parmantier, Alain Reineix, L. Kone, B. Demoulin

Comptes Rendus. Physique, 2009, 10, pp.83-90. ⟨10.1016/j.crhy.2008.12.002⟩. ⟨hal-00473697⟩

• Article dans une revue

Novel bondpad report process for III-V semiconductor devices using full HSQ properties

Malek Zegaoui, Nargess Choueib, P. Tilmant, Marc François, Christiane Legrand, Jean Chazelas, Didier Decoster

This paper reports on an easy and quick planarization and passivation technique of III-V compound semiconductor compatible with nanoscale devices. Vertical etching requires good sidewalls passivation to reduce drastically the leakage current and to obtain a good planarization of the devices for…

Microelectronic Engineering, 2009, 86 (1), pp.68-71. ⟨10.1016/j.mee.2008.09.043⟩. ⟨hal-00473043⟩

• Article dans une revue

Experimental study on sound and damaged mortar: Variation of ultrasonic parameters with porosity

Zoubeir Lafhaj, Marc Goueygou

The relationship between porosity and ultrasonic parameters of mortar was studied. In order to enhance the sensitivity of the ultrasonic wave to microstructural changes, a high frequency range, 0.6–1.2 MHz, was chosen. The material investigated consists of four mortar mixtures with water/cement…

Construction and Building Materials, 2009, 23 (2), pp.953-958. ⟨10.1016/j.conbuildmat.2008.05.012⟩. ⟨hal-00354607⟩

• Communication dans un congrès

Circuits amplificateurs en bande G pour la conception d'un dispositif d'imagerie passive

G. Desruelles, N. Rolland, P.A. Rolland

16èmes Journées Nationales Microondes, JNM 2009, 2009, France. pp.2E-2, 1-4. ⟨hal-00480326⟩

• Communication dans un congrès

Tuner intégré sur silicium pour l'extraction des paramètres de bruit sous pointes en bande millimétrique (60~110GHz) pour les technologies SiGeC HBT et MOSFET

Y. Tagro, D. Gloria, Gilles Dambrine

16èmes Journées Nationales Microondes, JNM 2009, 2009, France. pp.5E-11, 1-4. ⟨hal-00480322⟩

• Communication dans un congrès

High order statistic receiver applied to UWB radar

Laila Sakkila, Yassin El Hillali, J. Zaidouni, Atika Rivenq, C. Tatkeu, J.M. Rouvean

IEEE Pacific Rim Conference on Communications, Computers and Signal Processing, PacRim 2009, 2009, Canada. pp.643-647, ⟨10.1109/PACRIM.2009.5291294⟩. ⟨hal-00480315⟩

• Article dans une revue

Tunable magnetoelastic phononic crystals

J.F. Robillard, Olivier Bou Matar, Jerome O. Vasseur, P.A. Deymier, M. Stippinger, Anne-Christine Hladky, Yan Pennec, Bahram Djafari-Rouhani

Applied Physics Letters, 2009, 95, pp.124104-1-3. ⟨10.1063/1.3236537⟩. ⟨hal-00469668⟩