Publications

• Brevet

Integrated single-crystal MEMS device

M. Sworowski, D. Chevrie, P. Philippe

Patent n° : WO2008001253 (A2). 2008. ⟨hal-00372073⟩

• Article dans une revue

Coupled finite element : series expansion method for the modeling of directional piezoelectric sources radiating in an elastic formation

Madjid Berraki, Bertrand Dubus, Axelle Baroni

A numerical method is proposed to describe, in the frequency domain, the elastic waves radiated from a piezoelectric transducer in an infinite elastic formation in the rotational symmetric case. It relies upon the coupling between the Finite Element Method, to model the transducer and the…

Acta Acustica united with Acustica, 2008, 94 (5), pp.656-667. ⟨10.3813/AAA.918080⟩. ⟨hal-00356650⟩

• Article dans une revue

Magnetoelectric effect near spin reorientation transition in giant magnetostrictive-aluminum nitride thin film structure

Nicolas Tiercelin, Abdelkrim Talbi, Vladimir Preobrazhensky, Philippe Pernod, V. Mortet, K. Haenen, A. Soltani

Applied Physics Letters, 2008, 93, pp.162902-1-3. ⟨10.1063/1.3001601⟩. ⟨hal-00356659⟩

• Article dans une revue

MOSFETs RF noise optimization via channel engineering

T.C. Lim, R. Valentin, Gilles Dambrine, Francois Danneville

IEEE Electron Device Letters, 2008, 29, pp.118-121. ⟨10.1109/LED.2007.911293⟩. ⟨hal-00356661⟩

• Article dans une revue

Symmetrical frequency response in a split ring resonator based transmission line

Alejandro Borja, Jorge Carbonell, Vicente Boria, Didier Lippens

A coplanar waveguide line based on a split ring resonator technology and loaded with metallic strips and capacitances is proposed. The addition of series capacitances to previous unit cell implementations dramatically improves the upper band rejection levels and provides a transmission response…

Applied Physics Letters, 2008, 93 (20), pp.203505-1-3. ⟨10.1063/1.3025625⟩. ⟨hal-00356934⟩

• Article dans une revue

High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz

Alexandre Beck, Guillaume Ducournau, Mohammed Zaknoune, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Francis Mollot, Francis Hindle, Chun Yang, Gaël Mouret

The fabrication of InGaAs/InP uni-travelling-carrier photodiodes integrated with broadband horn antennas and demonstration of photomixing up to 1.8 THz are reported. A radiated power of 1.1 µW at 940 GHz was measured for a photocurrent of only 2.75 mA (50 mW optical power), demonstrating the high…

Electronics Letters, 2008, 44, pp.1320-1322. ⟨10.1049/el:20082219⟩. ⟨hal-00356950⟩

• Article dans une revue

Integrated 3D silicon electrodes for electrochemical sensing in microfluidic environments : application to single cell characterization

V. Senez, E. Lennon, S. Ostrovidov, T. Yamamoto, H. Fujita, Y. Sakai, T. Fujii

IEEE Sensors Journal, 2008, 8, pp.548-557. ⟨10.1109/JSEN.2008.918948⟩. ⟨hal-00356897⟩

• Article dans une revue

Comparative Sb and As segregation at the InP on GaAsSb interface

X. Wallart, S. Godey, Y. Douvry, L. Desplanque

Applied Physics Letters, 2008, 93, pp.123119-1-3. ⟨10.1063/1.2991299⟩. ⟨hal-00356947⟩

• Article dans une revue

Resistivity and surface states density of n and p type silicon nanowires

Francois Vaurette, J.P. Nys, D. Deresmes, B. Grandidier, D. Stiévenard

Journal of Vacuum Science and Technology, 2008, 26, pp.945-948. ⟨10.1116/1.2908438⟩. ⟨hal-00357381⟩

• Article dans une revue

Molecular-scale electronics

D. Vuillaume

Comptes Rendus. Physique, 2008, 9, pp.78-94. ⟨10.1016/j.crhy.2007.10.014⟩. ⟨hal-00357286⟩