Publications

• Article dans une revue

Passive photonic components using InP optical wire technology

Marie Lesecq, Sophie Maricot, Jean-Pierre Vilcot, Maxime Beaugeois

The authors present the design, fabrication and characterisation of passive photonic components using InP optical wire technology. These components are straight and curved waveguides as well as Y-junctions. Their ultimate use is to be integrated within active nanophotonic functions and this is…

IET Optoelectronics, 2008, 2, pp.69-75. ⟨10.1049/iet-opt:20060104⟩. ⟨hal-00357302⟩

• Article dans une revue

Band-edge photoluminescence and reflectivity of nonpolar (11-20) and semipolar (11-22) GaN formed by epitaxial lateral overgrowth on sapphire

T. Gühne, Z. Bougrioua, S. Laügt, M. Nemoz, P. Vennegues, B. Vinter, M. Leroux

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.075308-1-10. ⟨10.1103/PhysRevB.77.075308⟩. ⟨hal-00356987⟩

• Article dans une revue

Preparation of Electrochemical and Surface Plasmon Resonance Active Interfaces: Deposition of Indium Tin Oxide on Silver Thin Films

Sabine Szunerits, Xavier Castel, Rabah Boukherroub

Journal of Physical Chemistry C, 2008, 112, pp.10883-10888. ⟨hal-00402915⟩

• Article dans une revue

Estimation of dynamic parameters of overthreshold parametric phase conjugation of ultrasound in magnetostrictive ferrites according to data of quasi-static measurements

Andrey Brysev, Philippe Pernod, Vladimir L. Preobrazhensky

A simple method for testing ferrite samples intended to be active elements of parametric phase conjugator of ultrasound was proposed and experimentally approved. The method allows one to estimate such dynamic parameters of parametric phase conjugator of ultrasound as the parametric amplification…

Physics of Wave Phenomena, 2008, 16, pp.80-85. ⟨10.3103/S1541308X08020027⟩. ⟨hal-00800675⟩

• Communication dans un congrès

Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702973⟩. ⟨hal-00800960⟩

• Communication dans un congrès

Flow induced vibration of a microvalve for aerodynamic control

O. Ducloux, Abdelkrim Talbi, L. Gimeno, R. Viard, Philippe Pernod, Vladimir Preobrazhensky, A. Merlen

9th International Conference on Flow-Induced Vibrations, FIV2008, 2008, Prague, Czech Republic. pp.1-5. ⟨hal-00800967⟩

• Communication dans un congrès

Left-handed metamaterial based on elliptical subwavelength apertures arrays for THz applications

Eric Lheurette, Jorge Carbonell, Charles Croënne, Didier Lippens

2nd Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2008, Sep 2008, Pamplona, Spain. pp.774-776. ⟨hal-00804702⟩

• Article dans une revue

Gold metallogeny in the Birimian craton of Burkina Faso.

Didier Béziat, M. Dubois, Pierre Debat, Serge Nikiéma, S. Salvi, Francis Tollon

J. Afr. Earth Sci, 2008, pp.215-233. ⟨hal-00326270⟩

• Article dans une revue

Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors

H. Marinchio, J. Torres, G. Sabatini, P. Nouvel, C. Palermo, Laurent Chusseau, L. Varani, F. Teppe, P. Shiktorov, E. Starikov, V. Gruzinskis, A. Shchepetov, S. Bollaert, Yannick Roelens

A photomixed laser beam of two 1.55 μm lasers is used to obtain interband photoexcitation at the difference frequency and at room temperature in suvmicron gate length INAIA/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistors channel Fundamental…

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5 (1), pp.257-260. ⟨10.1002/pssc.200776572⟩. ⟨hal-00327410⟩

• Article dans une revue

Characterization of ultrathin SOI film and application to short channel MOSFETs

Xing Tang, N. Reckinger, G. Larrieu, Emmanuel Dubois, D. Flandre, J.P. Raskin, B. Nysten, A.M. Jonas, V. Bayot

In this study, a very dilute solution (NH4OH:H2O2:H2O 1:8:64 mixture) was employed to reduce the thickness of commercially available SOI wafers down to 3 nm. The etch rate is precisely controlled at 0.11 Å s−1 based on the self-limited etching speed of the solution. The thickness uniformity of the…

Nanotechnology, 2008, 19, pp.165703-1-7. ⟨10.1088/0957-4484/19/16/165703⟩. ⟨hal-00356972⟩