Publications

• Communication dans un congrès

High 'on-off' conductance ratio in self-assembled monolayers of azobenzene derivatized oligothiophenes grafted on gold

K. Smaali, S. Lenfant, D. Deresmes, S. Godey, D. Vuillaume, S. Karpe, M. Oçafrain, P. Blanchard, J. Roncali

10th European Conference on Molecular Electronics, ECME 2009, 2009, Copenhagen, Denmark. ⟨hal-00574930⟩

• Communication dans un congrès

Metamaterial technologies at terahertz frequencies

F. Zhang, Charles Croënne, G. Houzet, D.P. Gaillot, X. Melique, Eric Lheurette, D. Lippens

25th Progress in Electromagnetics Research Symposium, PIERS 2009, 2009, Beijing, China. ⟨hal-00574853⟩

• Chapitre d'ouvrage

Metal-semiconductor-metal photodiodes

Joseph Harari, V. Magnin

Decoster D., Harari J. Optoelectronic sensors, ISTE-Wiley, Chapter 5, 155-178, 2009. ⟨hal-00575793⟩

• Chapitre d'ouvrage

Les cristaux phononiques : des matériaux pour contrôler la propagation des ondes acoustiques

Bahram Djafari-Rouhani, Yan Pennec, Jerome O. Vasseur, V. Laude, A. Khelif, S. Benchabane

Leray J.L., Boudenot J.C., Gautier J. La micro-nano électronique, enjeux et mutations, CNRS ÉDITIONS, pp.279-283, 2009. ⟨hal-00575798⟩

• Chapitre d'ouvrage

Dual signal processing approach for Lamb wave analysis

Jamal Assaad, Sébastien Grondel, Faysal El Youbi, Emmanuel Moulin, Christophe Delebarre

The identification of Lamb modes is still the most difficult step in the process of damage detection. Therefore, the aim of this paper is to use a dual signal processing approach in order to better identify Lamb modes. This approach is based on the use of a relationship between the Short Time…

Springer Proceedings in Physics, 128, pp.341-353, 2009, 978-3-540-89104-8. ⟨10.1007/978-3-540-89105-5_30⟩. ⟨hal-00473729⟩

• Article dans une revue

AlGaN/GaN MISHEMT with hBN as gate dielectric

J.C. Gerbedoen, Ali Soltani, M. Mattalah, M. Moreau, P. Thevenin, Jean-Claude de Jaeger

Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an…

Diamond and Related Materials, 2009, 18, pp.1039 - 1042. ⟨10.1016/j.diamond.2009.02.018⟩. ⟨hal-00435395⟩

• Article dans une revue

Franck-Condon blockade in suspended carbon nanotube quantum dots

R. Leturcq, C. Stampfer, K. Inderbitzin, L. Durrer, C. Hierold, E. Mariani, M.G. Schultz, F. von Oppen, K. Ensslin

Nature Physics, 2009, 5, pp.327-331. ⟨10.1038/nphys1234⟩. ⟨hal-00473093⟩

• Article dans une revue

Preparation and multi-characterization of plasma polymerized allylamine films

Abdennour Abbas, Céline Vivien, Bertrand Bocquet, Didier Guillochon, Philippe Supiot

Plasma polymerized allylamine (ppAA) films were deposited in a radio-frequency glow discharge plasma reactor using a continuous-wave mode and varying the discharge power from 15 to 125 W. The deposition rate reached 26 nm · min−1 and was constant within at least half an hour of process. The…

Plasma Processes and Polymers, 2009, 6, pp.593-604. ⟨10.1002/ppap.200900016⟩. ⟨hal-00471822⟩

• Article dans une revue

Performance improving of OCDMA system using 2-D optical codes with optical SIC receiver

H. Mrabet, Iyad Dayoub, R. Attia, S. Haxha

Journal of Lightwave Technology, 2009, 27, pp.4744-4753. ⟨10.1109/JLT.2009.2026293⟩. ⟨hal-00471837⟩

• Article dans une revue

Design of new multi standard patch antenna GSM/PCS/UMTS/HIPERLAN for mobile cellular phones

M. Ben Ahmed, M. Bouhorma, F. Elouaai, A. Mamouni

European Journal of Scientific Research, 2009, 32, pp.151-157. ⟨hal-00472452⟩