Publications

Affichage de 11181 à 11190 sur 16098


  • Communication dans un congrès

Particles separation by oscillation in a capillary tube

A. Merlen, Farzam Zoueshtiagh, P.J. Thomas

6th International Conference on Nanochannels, Microchannels, and Minichannels, ASME ICNMM2008, 2008, Darmstadt, Germany. Paper ICNMM2008-62122, 1133-1138, ⟨10.1115/ICNMM2008-62122⟩. ⟨hal-00800972⟩

  • Communication dans un congrès

Analysis of trap states effects on the frequency-dependent capacitance and conductance of an AlGaN/GaN heterostructure

A. Telia, A. Meziani, A. Soltani

2nd International Conference Signals, Circuits and Systems, SCS 2008, 2008, Hammamet, Tunisia. pp.1-5, ⟨10.1109/ICSCS.2008.4746881⟩. ⟨hal-00800977⟩

  • Article dans une revue

Influence of thermal aging on optical fiber properties

F. Tarrach, A. Ch'Hayder, S. Guermazi, Guillaume Ducournau, M. Ketata

Optical Engineering, 2008, 47, pp.065006. ⟨10.1117/1.2948319⟩. ⟨hal-00800676⟩

  • Article dans une revue

Finite difference time domain (FDTD) analysis of new applicators for hyperthermia and evaluation of the SAR distribution in human head near cellular phone

S. Bri, A. Saadi, M. Habibi, A. Nakheli, L. Zenkovar, L. Bellarbi, A. Mamouni

AMSE Modelling, Measurement and Control, Series C : Chemistry, Geology, Environment and Bioengineering, 2008, 69, pp.34-52. ⟨hal-00800672⟩

  • Article dans une revue

Influence of inelastic processes on fast-atom-surface diffraction

F. Aigner, N. Simonovic, B. Solleder, L. Wirtz, J. Burgdorfer

Journal of Physics: Conference Series, 2008, 133, pp.012014-1-8. ⟨10.1088/1742-6596/133/1/012014⟩. ⟨hal-00800707⟩

  • Article dans une revue

1.55 µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Kianhuan Tan, Soon Fatt Yoon, Wan Khai Loke, Satrio Wicaksono, Zhichuan Xu, Tien Khee Ng, Kim Luong Lew, N. Saadsaoud, Malek Zegaoui, Didier Decoster, Jean Chazelas

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was…

Applied Physics Letters, 2008, 92 (11), pp.113513-1-3. ⟨10.1063/1.2898507⟩. ⟨hal-00357300⟩

  • Communication dans un congrès

UWB-time-reversal wireless communication in tunnel

H. Saghir, M. Heddebaut, F. Elbahhar

2nd International Conference on Wireless Communications in Underground and Confined Areas, ICWCUCA 2008, 2008, Val-d'Or, Québec, Canada. ⟨hal-00811741⟩

  • Communication dans un congrès

Analysis of cryptosporidium parvum oocysts by impedance spectroscopy : concentration determination and assessment of their viability

T. Houssin, J. Follet, A. Follet, V. Senez

X International Workshop on Opportunistic Protists, IWOP-10, 2008, Boston, MA, United States. ⟨hal-00811751⟩

  • Communication dans un congrès

Caractérisation du béton à l'aide de la réflectométrie ultrasonore

P. Safinowski, Bogdan Piwakowski, M. Kaczmarek, A. Kosecki

Journées COFREND 2008, 2008, Toulouse, France. papier 140, 1-9. ⟨hal-00812459⟩