Publications

Affichage de 11301 à 11310 sur 16098


  • Article dans une revue

Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain

M. Borg, E. Lefebvre, M. Malmkvist, L. Desplanque, X. Wallart, Yannick Roelens, Gilles Dambrine, A. Cappy, S. Bollaert, J. Grahn

Solid-State Electronics, 2008, 52, pp.775-781. ⟨10.1016/j.sse.2007.12.002⟩. ⟨hal-00356942⟩

  • Article dans une revue

Magnesium diffusion profile in GaN grown by MOVPE

Z. Benzarti, I. Halidou, Z. Bougrioua, T. Boufaden, B. El Jani

Journal of Crystal Growth, 2008, 310, pp.3274-3277. ⟨10.1016/j.jcrysgro.2008.04.008⟩. ⟨hal-00356993⟩

  • Article dans une revue

Growth and structural characterization of cerium oxide thin films realized on Si(111) substrates by on-axis r.f. magnetron sputtering

M.T. Ta, D. Briand, Y. Guhel, J. Bernard, J.C. Pesant, B. Boudart

Thin Solid Films, 2008, 517, pp.450-452. ⟨10.1016/j.tsf.2008.08.059⟩. ⟨hal-00360032⟩

  • Article dans une revue

Plasma oscillations in nanotransistors for room temperature detection and emission of terahertz radiation

A. El Fatimy, R. Tauk, S. Boubanga, F. Teppe, N. Dyakonova, W. Knap, J. Lyonnet, Y.M. Meziani, T. Otsuji, M.A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Didier Theron, A. Cappy, Christophe Gaquière

Physica Status Solidi C: Current Topics in Solid State Physics, 2008, 5, pp.244-248. ⟨10.1002/pssc.200776585⟩. ⟨hal-00360007⟩

  • Article dans une revue

Counting statistics of single electron transport in a semiconductor quantum dot

S. Gustavsson, R. Leturcq, B. Simovic, R. Schleser, T. Ihn, P. Studerus, K. Ensslin, D.C. Driscoll, A.C. Gossard

Advances in Solid State Physics, 2008, 46, pp.31-43. ⟨10.1007/978-3-540-38235-5_3⟩. ⟨hal-00357788⟩

  • Article dans une revue

New developments on diamond photodetector for VUV solar observations

Ali Benmoussa, Ali Soltani, Ken Haenen, Udo Kroth, Vincent Mortet, Hassan Ali Barkad, David Bolsée, Christian Hermans, M. Richter, Jean-Claude de Jaeger, Jean-François Hochedez

A new large-size metal–semiconductor–metal photoconductor device of 4.6 mm in diameter based on diamond material has been reprocessed and characterized in the vacuum-ultraviolet (VUV) wavelength range. The metal finger contacts have been processed to 2 µm in width with spacing between the contacts…

Semiconductor Science and Technology, 2008, 23 (3), pp.035026. ⟨10.1088/0268-1242/23/3/035026⟩. ⟨hal-00357795⟩

  • Article dans une revue

1.55 µm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Kianhuan Tan, Soon Fatt Yoon, Wan Khai Loke, Satrio Wicaksono, Zhichuan Xu, Tien Khee Ng, Kim Luong Lew, N. Saadsaoud, Malek Zegaoui, Didier Decoster, Jean Chazelas

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was…

Applied Physics Letters, 2008, 92 (11), pp.113513-1-3. ⟨10.1063/1.2898507⟩. ⟨hal-00357300⟩

  • Communication dans un congrès

Microsystème résonant, simulation et micro fabrication

Nour Eddine Bourzgui, A. Treizebre

10èmes Journées Pédagogiques du CNFM, 2008, Saint-Malo, France. pp.1-6. ⟨hal-00804729⟩

  • Communication dans un congrès

Normal incidence on stacked surfaces of split ring resonators

Jorge Carbonell, Eric Lheurette, Alejandro Borja, Vicente Boria, Didier Lippens

2nd Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2008, Sep 2008, Pamplona, Spain. pp.187-189. ⟨hal-00804704⟩