Publications

Affichage de 11431 à 11440 sur 16378


  • Communication dans un congrès

Micro ripples, sand ripples and their universal wavelength scaling

P.J. Thomas, Farzam Zoueshtiagh, A. Merlen, V. Thomy

7th EUROMECH Fluid Mechanics Conference, EFMC7, 2008, Manchester, United Kingdom. ⟨hal-00811718⟩

  • Communication dans un congrès

THz emission from AlGaN/GaN high mobility transistors

N. Dyakonova, D. Coquillat, F. Teppe, W. Knap, M.E. Levinshtein, S.L. Rumyantsev, M.A. Poisson, S. Delage, Christophe Gaquière, S. Vandenbrouck, A. Cappy

V International Conference 'Basic Problems of Optics', 2008, St Petersburg, Russia. ⟨hal-00811735⟩

  • Article dans une revue

Gate pulse electrical method to characterize hysteresis phenomena in organic field effect transistor

C. Petit, D. Zander, K. Lmimouni, M. Ternisien, D. Tondelier, S. Lenfant, D. Vuillaume

Organic Electronics, 2008, 9, pp.979-984. ⟨10.1016/j.orgel.2008.07.013⟩. ⟨hal-00357293⟩

  • Article dans une revue

Current based antibodies detection from human serum enhanced by secondary antibodies labelled with gold nanoparticles immobilized in a nanogap

L. Marcon, O. Melnyk, D. Stievenard

Biosensors and Bioelectronics, 2008, 23, pp.1185-1188. ⟨10.1016/j.bios.2007.10.027⟩. ⟨hal-00357335⟩

  • Article dans une revue

Study of the fundamental Lamb modes interaction with asymmetrical discontinuities

Farouk Benmeddour, Sébastien Grondel, Jamal Assaad, Emmanuel Moulin

NDT & E International, 2008, 41, pp.330-340. ⟨10.1016/j.ndteint.2008.01.004⟩. ⟨hal-00360328⟩

  • Communication dans un congrès

Etude des effets parasites dans les transistors à haute mobilité à base de nitrure : HEMT AlGaN/GaN

M. Gassoumi, O. Fathallah, Christophe Gaquière, G. Guillot, H. Maaref

11èmes Journées Maghrébines des Sciences de Matériaux, JMSM 2008, 2008, Hammamet, Tunisie. ⟨hal-00811731⟩

  • Communication dans un congrès

Proximity Effect of Neighbour Victim Lossy Interconnects on a Single Attacker and Vice Versa

Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht

Signal integrity on a set from three to eight lossy copper interconnects of less than one square micron is determined from a transient simulation based on electrical circuit representation. This circuit is deduced from a full wave finite element method. Our signal integrity results on numerous…

ISIC: International Symposium on Integrated Circuits, Sep 2007, Singapore, Singapore. pp.406-409, ⟨10.1109/ISICIR.2007.4441884⟩. ⟨lirmm-00176552⟩