Publications

• Article dans une revue

Screening and polaronic effects induced by a metallic gate and a surrounding oxide on donor and acceptor impurities in silicon nanowires

Mamadou Diarra, Christophe Delerue, Yann-Michel Niquet, Guy Allan

We present self-consistent tight binding calculations of the electronic structure of donor and acceptor impurities in silicon nanowires surrounded by a gate oxide SiO2 or HfO2 and a metallic gate. These environments efficiently screen the potential of the impurities so that their ionization energy…

Journal of Applied Physics, 2008, 103, pp.073703-1-5. ⟨10.1063/1.2901182⟩. ⟨hal-00357380⟩

• Autre publication scientifique

Etude et faisabilité d'un système de communication Ultra Large Bande (ULB) en gamme millimétrique en technologie silicium avancée

M. Devulder

2008. ⟨hal-00362105⟩

• Communication dans un congrès

Etude des effets parasites dans les transistors à haute mobilité à base de nitrure : HEMT AlGaN/GaN

M. Gassoumi, O. Fathallah, Christophe Gaquière, G. Guillot, H. Maaref

11èmes Journées Maghrébines des Sciences de Matériaux, JMSM 2008, 2008, Hammamet, Tunisie. ⟨hal-00811731⟩

• Article dans une revue

Materials with on-demand refractive indices in the terahertz range

Christelle Kadlec, Filip Kadlec, Petr Kužel, Karine Blary, Patrick Mounaix

Optics Letters, 2008, 33 (19), pp.2275-2277. ⟨10.1364/OL.33.002275⟩. ⟨hal-00360031⟩

• Article dans une revue

Structural control of the horizontal double fixation of oligothiophenes on gold

T.K. Tran, M. Oçafrain, S. Karpe, P. Blanchard, J. Roncali, S. Lenfant, S. Godey, D. Vuillaume

Quaterthiophenes bearing one (1) or two (2) alkanethiol chains attached at the internal β-position of the outermost thiophene ring through a sulfide linkage have been synthesized. Cyclic voltammetric analysis of their electrochemical behavior in solution suggests that electrooxidation of the doubly…

Chemistry - A European Journal, 2008, 14, pp.6237-6246. ⟨10.1002/chem.200800133⟩. ⟨hal-00357296⟩

• Communication dans un congrès

Proximity Effect of Neighbour Victim Lossy Interconnects on a Single Attacker and Vice Versa

Freddy Ponchel, Jean-François Legier, Erick Paleczny, Christophe Seguinot, Denis Deschacht

Signal integrity on a set from three to eight lossy copper interconnects of less than one square micron is determined from a transient simulation based on electrical circuit representation. This circuit is deduced from a full wave finite element method. Our signal integrity results on numerous…

ISIC: International Symposium on Integrated Circuits, Sep 2007, Singapore, Singapore. pp.406-409, ⟨10.1109/ISICIR.2007.4441884⟩. ⟨lirmm-00176552⟩

• Autre publication scientifique

Contribution à l'étude des transistors organiques à effet de champ : effet de la fonctionnalisation du diélectrique de grille par des monocouches auto assemblées

M. Ternisien

2008. ⟨hal-00376232⟩

• Communication dans un congrès

Recent results on characterisation of PF GIPOF designed for high-speed LAN

A. Goffin, P. Mégret, C. Lethien, M. Dossou, S. Bette

13th Annual Symposium of the IEEE/LEOS Benelux Chapter, 2008, Netherlands. pp.103-106. ⟨hal-00376222⟩

• Article dans une revue

Measuring current by counting electrons in a nanowire quantum dot

S. Gustavsson, I. Shorubalko, R. Leturcq, S. Schön, K. Ensslin

We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting compare well to a direct measurements of the quantum dot…

Applied Physics Letters, 2008, 92, pp.152101-1-3. ⟨10.1063/1.2892679⟩. ⟨hal-00357371⟩

• Article dans une revue

RF small signal analysis of Schottky-barrier p-MOSFETs

R. Valentin, Emmanuel Dubois, J.P. Raskin, G. Larrieu, Gilles Dambrine, T.C. Lim, N. Breil, Francois Danneville

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF…

IEEE Transactions on Electron Devices, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩. ⟨hal-00356664⟩