Publications

• Article dans une revue

A study of a millimeter-wave quarter-wave patch antenna on a benzocyclobutene polymer

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2008, 18, pp.075015-1-6. ⟨10.1088/0960-1317/18/7/075015⟩. ⟨hal-00356912⟩

• Article dans une revue

Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44-360 nm : photoemission assessments

A. Benmoussa, Jean-François Hochedez, R. Dahal, J. Li, J.Y. Lin, H.X. Jiang, A. Soltani, Jean-Claude de Jaeger, U. Kroth, M. Richter

Applied Physics Letters, 2008, 92, pp.022108 (1-3). ⟨10.1063/1.2834701⟩. ⟨hal-00357794⟩

• Article dans une revue

Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

T. Xu, J.P. Nys, B. Grandidier, D. Stievenard, Yannick Coffinier, Rabah Boukherroub, R. Larde, E. Cadel, P. Pareige

Journal of Vacuum Science and Technology, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩. ⟨hal-00357357⟩

• Article dans une revue

Optical investigation of quantum confinement in PbSe nanocrystals at different points in the Brillouin zone

Rolf Koole, Guy Allan, Christophe Delerue, Andries Meijerink, Daniel Vanmaekelbergh, Arjan J Houtepen

We present detailed investigations on the optical properties of PbSe nanocrystals. The absorption spectra of monodisperse, quasispherical nanocrystals exhibit sharp features as a result of distinct optical transitions. To study the size dependence, absorption spectra of nanocrystals ranging from 3.…

Small, 2008, 4, pp.127-133. ⟨10.1002/smll.200700632⟩. ⟨hal-00357365⟩

• Article dans une revue

Screening and polaronic effects induced by a metallic gate and a surrounding oxide on donor and acceptor impurities in silicon nanowires

Mamadou Diarra, Christophe Delerue, Yann-Michel Niquet, Guy Allan

We present self-consistent tight binding calculations of the electronic structure of donor and acceptor impurities in silicon nanowires surrounded by a gate oxide SiO2 or HfO2 and a metallic gate. These environments efficiently screen the potential of the impurities so that their ionization energy…

Journal of Applied Physics, 2008, 103, pp.073703-1-5. ⟨10.1063/1.2901182⟩. ⟨hal-00357380⟩

• Article dans une revue

Measuring current by counting electrons in a nanowire quantum dot

S. Gustavsson, I. Shorubalko, R. Leturcq, S. Schön, K. Ensslin

We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting compare well to a direct measurements of the quantum dot…

Applied Physics Letters, 2008, 92, pp.152101-1-3. ⟨10.1063/1.2892679⟩. ⟨hal-00357371⟩

• Autre publication scientifique

Etude et faisabilité d'un système de communication Ultra Large Bande (ULB) en gamme millimétrique en technologie silicium avancée

M. Devulder

2008. ⟨hal-00362105⟩

• Autre publication scientifique

Génération et détection optoélectroniques d'ondes térahertz

Jean-Francois Lampin

2008. ⟨hal-00362110⟩

• Communication dans un congrès

L'accueil de projets exogènes à l'IEMN dans le cadre du réseau RTB du CNRS

Karine Blary, Isabelle Roch-Jeune, J.L. Lorriaux

12èmes Journées Nano, Micro et Optoélectronique, JNMO'08, 2008, St Pierre d'Oléron, France. ⟨hal-00362048⟩

• Communication dans un congrès

Negative bias stress effect in pentacene thin-film transistors

C. Petit, D. Zander, K. Lmimouni, M. Ternisien, S. Lenfant, D. Vuillaume

4th International Meeting on Molecular Electronics, ElecMol'08, 2008, Grenoble, France. ⟨hal-00361616⟩