Publications

• Article dans une revue

Integration of PtSi in p-type MOSFETs using a sacrificial low-temperature germanidation process

Nicolas Breil, Emmanuel Dubois, Aomar Halimaoui, Arnaud Pouydebasque, Guilhem Larrieu, Adam Laszcz, J. Ratajcak, Thomas Skotnicki

In this letter, an original selective etching method of Pt with respect to PtSi using a sacrificial low-temperature germanidation process is used for the integration of valence band edge contacts in p-type MOSFET devices. After silicidation annealing, the excess of Pt due to incomplete reaction…

IEEE Electron Device Letters, 2008, 29, pp.152-154. ⟨10.1109/LED.2007.914090⟩. ⟨hal-00356971⟩

• Article dans une revue

Preparation of Electrochemical and Surface Plasmon Resonance Active Interfaces: Deposition of Indium Tin Oxide on Silver Thin Films

Sabine Szunerits, Xavier Castel, Rabah Boukherroub

Journal of Physical Chemistry C, 2008, 112, pp.10883-10888. ⟨hal-00402915⟩

• Article dans une revue

Gold metallogeny in the Birimian craton of Burkina Faso.

Didier Béziat, M. Dubois, Pierre Debat, Serge Nikiéma, S. Salvi, Francis Tollon

J. Afr. Earth Sci, 2008, pp.215-233. ⟨hal-00326270⟩

• Communication dans un congrès

Evaluation de l'état des ouvrages en béton par combinaison de techniques non destructives, Evaluation of concrete structures by combining non destructive testing methods

J.P. Balayssac, S. Laurens, Ginette Arliguie, M.A. Ploix, D. Breysse, Bogdan Piwakowski, Géraldine Villain

Dans une perspective de développement durable, la mise en place d’une procédure de gestion et d’entretien du patrimoine bâti devient une des préoccupations essentielles des maîtres d’ouvrages de Génie Civil. Dans ce contexte, le projet SENSO (Stratégie d’Evaluation Non destructive pour la…, In the context of sustainable development, the establishment of a procedure for the management and maintenance of the built heritage is one of the main interest for the owners of Civil Engineering structures. In this context, SENSO project (Strategy of non destructive evaluation for the monitoring…

Journées COFREND 2008, 2008, Toulouse, France. papier 47, 1-14. ⟨hal-00814962⟩

• Communication dans un congrès

Application of chaotic cavities to localized nonlinearity imaging with time reversal

Olivier Bou Matar, Y. Li, Vladimir Preobrazhensky, Philippe Pernod

IEEE International Ultrasonics Symposium, 2008 IEEE IUS, 2008, Beijing, China. ⟨hal-00811717⟩

• Communication dans un congrès

Left-handed metamaterial based on elliptical subwavelength apertures arrays for THz applications

Eric Lheurette, Jorge Carbonell, Charles Croënne, Didier Lippens

2nd Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2008, Sep 2008, Pamplona, Spain. pp.774-776. ⟨hal-00804702⟩

• Communication dans un congrès

[Invited] Millimeter wave device measurements and modeling

Gilles Dambrine

European Microwave Week, Workshop WMO-2 (EuMC/EuMIC) : Advances in Characterization and Modelling of Emerging Low-Power and High-Power Devices, 2008, Amsterdam, Netherlands. ⟨hal-00811076⟩

• Communication dans un congrès

Flow induced vibration of a microvalve for aerodynamic control

O. Ducloux, Abdelkrim Talbi, L. Gimeno, R. Viard, Philippe Pernod, Vladimir Preobrazhensky, A. Merlen

9th International Conference on Flow-Induced Vibrations, FIV2008, 2008, Prague, Czech Republic. pp.1-5. ⟨hal-00800967⟩

• Communication dans un congrès

Detection of salt cavities by high resolution seismic at Art-sur-Meurthe, Lorraine, France

A. Kosecki, Bogdan Piwakowski, L. Driad-Lebeau, P. Safinowski

14th European Meeting of Environmental and Engineering Geophysics, Near Surface 2008, 2008, Krakow, Poland. CDROM, paper P22-1-4. ⟨hal-00800995⟩

• Communication dans un congrès

Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

B.G. Vasallo, Nicolas Wichmann, S. Bollaert, Yannick Roelens, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702973⟩. ⟨hal-00800960⟩