Publications

• Article dans une revue

Measuring current by counting electrons in a nanowire quantum dot

S. Gustavsson, I. Shorubalko, R. Leturcq, S. Schön, K. Ensslin

We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting compare well to a direct measurements of the quantum dot…

Applied Physics Letters, 2008, 92, pp.152101-1-3. ⟨10.1063/1.2892679⟩. ⟨hal-00357371⟩

• Article dans une revue

Location and communication using cooperative radar system dedicated to guided transports

Yassin El Hillali, C. Tatkeu, Atika Rivenq, Jean-Michel Rouvaen, J.P. Ghys

Transportation research. Part C, Emerging technologies, 2008, 16, pp.141-152. ⟨10.1016/j.trc.2007.07.008⟩. ⟨hal-00356903⟩

• Article dans une revue

Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

M. Gassoumi, J.M. Bluet, G. Guillot, Christophe Gaquière, H. Maaref

Materials Science and Engineering: C, 2008, 28, pp.787-790. ⟨10.1016/j.msec.2007.10.068⟩. ⟨hal-00357801⟩

• Article dans une revue

Elastic properties of finite three-dimensional solid phononic-crystal slabs

R. Sainidou, Bahram Djafari-Rouhani, Jerome O. Vasseur

Photonics and Nanostructures - Fundamentals and Applications, 2008, 6, pp.122-126. ⟨10.1016/j.photonics.2007.10.001⟩. ⟨hal-00357785⟩

• Article dans une revue

Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures

Y. Cordier, M. Azize, N. Baron, Z. Bougrioua, Sébastien Chenot, O. Tottereau, J. Massies, P. Gibart

Journal of Crystal Growth, 2008, 310, pp.948-954. ⟨10.1016/j.jcrysgro.2007.11.161⟩. ⟨hal-00357273⟩

• Article dans une revue

RF small signal analysis of Schottky-barrier p-MOSFETs

R. Valentin, Emmanuel Dubois, J.P. Raskin, G. Larrieu, Gilles Dambrine, T.C. Lim, N. Breil, Francois Danneville

This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF…

IEEE Transactions on Electron Devices, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩. ⟨hal-00356664⟩

• Article dans une revue

Sonic band gaps in one-dimensional phononic crystals with a symmetric stub

Anne-Christine Hladky, Jerome O. Vasseur, Bahram Djafari-Rouhani, M. de Billy

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.104304-1-7. ⟨10.1103/PhysRevB.77.104304⟩. ⟨hal-00356646⟩

• Article dans une revue

Structural control of the horizontal double fixation of oligothiophenes on gold

T.K. Tran, M. Oçafrain, S. Karpe, P. Blanchard, J. Roncali, S. Lenfant, S. Godey, D. Vuillaume

Quaterthiophenes bearing one (1) or two (2) alkanethiol chains attached at the internal β-position of the outermost thiophene ring through a sulfide linkage have been synthesized. Cyclic voltammetric analysis of their electrochemical behavior in solution suggests that electrooxidation of the doubly…

Chemistry - A European Journal, 2008, 14, pp.6237-6246. ⟨10.1002/chem.200800133⟩. ⟨hal-00357296⟩

• Article dans une revue

InP/benzocyclobutene optical nanowires

Michèle Carette, Jean-Pierre Vilcot, D. Bernard, Didier Decoster

Electronics Letters, 2008, 44, pp.902-903. ⟨10.1049/el:20081169⟩. ⟨hal-00357307⟩

• Article dans une revue

Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

T. Xu, J.P. Nys, B. Grandidier, D. Stievenard, Yannick Coffinier, Rabah Boukherroub, R. Larde, E. Cadel, P. Pareige

Journal of Vacuum Science and Technology, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩. ⟨hal-00357357⟩