Publications

• Communication dans un congrès

Co-integration of a 1GHz ultrasonic transducer in a BioMEMS. Design and optimisation through a new physical approach

Y. Dubois, Pierre Campistron, Jean-Etienne Lefebvre, Julien Carlier

Proceedings of the 2007 International Congress on Ultrasonics, ICU 2007, 2007, Vienna, Austria. ⟨hal-00367713⟩

• Communication dans un congrès

Enhanced spatial resolution of MALDI images using silicon masks

Nicolas Verplanck, Maxence Wisztorski, Jonathan Stauber, J.C. Camart, Michel Salzet, Isabelle Fournier, Vincent Thomy

This paper reports on simple, efficient and economical methods to increase MALDI image resolution. It is not currently possible to focus the diameter of a MALDI laser down to 50x50µm², i.e. 2500µm², without decreasing signal intensity. But using Silicon masks openings features, it might even be…

11th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2007, 2007, Paris, France. pp.41-43. ⟨hal-00284454⟩

• Article dans une revue

Thin Pb(ZrxTi1-x)O3 (PZT) rhombohedral compositions deposited on the Si-substrate and its non-linear piezoelectric response

J. Nosek, M. Pokorny, M. Sulc, L. Burianova, Caroline Soyer, Denis Remiens

Ferroelectrics, 2007, 351, pp.112-121. ⟨10.1080/00150190701354075⟩. ⟨hal-00285655⟩

• Communication dans un congrès

Superhydrophobic surface for a total reversible electrowetting effect

Yannick Coffinier, G. Piret, N. Verplanck, J.C. Camart, Rabah Boukherroub, R. Blossey, V. Thomy

Cost Meeting, 2007, Twente, Netherlands. ⟨hal-00285619⟩

• Article dans une revue

Characterization of ferroelectric films up to 60 GHz : application to phase shifters

Gabriel Vélu, Ludovic Burgnies, Gregory Houzet, Karine Blary, Didier Lippens, Jean-Claude Carru

Paraelectric Ba0.5Sr0.5TiO3 films 0.3 μm thick have been deposited by sol-gel on c-axis sapphire substrates. They have been investigated from 1 kHz to 60 GHz using coplanar waveguide transmission lines and interdigitated capacitors. The dielectric constant εr is around 300 and the loss tangent is 0…

Integrated Ferroelectrics, 2007, 93 (1), pp.110-118. ⟨10.1080/10584580701756284⟩. ⟨hal-00285627⟩

• Article dans une revue

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk, J. Lusakowski, W. Knap, A. Tiberj, Z. Bougrioua, M. Azize, P. Lorenzini, M. Sakowicz, K. Karpierz, C. Fenouillet-Beranger, M. Casse, C. Gallon, F. Boeuf, T. Skotnicki

Journal of Applied Physics, 2007, 102 (10), pp.103701.1. ⟨hal-00389540⟩

• N°spécial de revue/special issue

Una indagine epistemologica tra XVIII e XIX sec. (An epistemological investigation between 18th and 19th centuries)

Raffaele Pisano

La fisica nella scuola , XL (3), pp.103-114, 2007, In Pisano R. (ed). Proceedings of XLVI AIF National Congress. ⟨hal-04514972⟩

• Communication dans un congrès

AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

Christophe Gaquière, F Medjdoub, J.F. Carlin, S. Vandenbrouck, E. Delos, E. Feltin, N. Grandjean, E. Kohn

IEEE International Microwave Symposium, IEEE/MTT-S 2007, 2007, United States. pp.2145-2148, ⟨10.1109/MWSYM.2007.380349⟩. ⟨hal-00284400⟩

• Article dans une revue

Spatially resolved Raman spectroscopy of single- and few-layer graphene

D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen, C. Hierold, L. Wirtz

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from…

Nano Letters, 2007, 7 (2), pp.238-242. ⟨10.1021/nl061702a⟩. ⟨hal-00283156⟩

• Article dans une revue

Effect of growth temperature on defect states of GaNAsSb intrinsic layer in GaAs/GaNAsSb/GaAs photodiode for 1.3µm application

Satrio Wicaksono, Soon Fatt Yoon, Wan Khai Loke, Kianhuan Tan, Kim Luong Lew, Malek Zegaoui, Jean-Pierre Vilcot, Didier Decoster, Jean Chazelas

A GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GaAsGaAsSbNGaAs p-i-n photodiode with response up to 1.3 μm. Deep level transient spectroscopy measurement on the GaAsGaAsSbNGaAs reveals two types of hole traps (HTs) in the GaAsSbN i layer; (i) HT1: a…

Journal of Applied Physics, 2007, 102 (4), pp.044505. ⟨10.1063/1.2769801⟩. ⟨hal-00283082⟩