Publications

• Communication dans un congrès

Growth and characterization of AlInN/GaN field effect transistors

J.F. Carlin, F Medjdoub, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

Proceedings of the 7th International Conference of Nitride Semiconductors, ICNS-7, 2007, Las Vegas, NV, United States. ⟨hal-00367697⟩

• Communication dans un congrès

Phase conjugate ultrasound waves in moving nonlinear media

Vladimir Preobrazhensky, Philippe Pernod, Y. Pyl'Nov

Proceedings of the 2007 International Congress on Ultrasonics, ICU 2007, 2007, Vienna, Austria. ⟨hal-00367044⟩

• Communication dans un congrès

Etude par microscopie à champ proche de structures à base de matériau III-N pour émetteurs électroniques planaires

Sophie Barbet, Thierry Melin, Didier Theron, Raphaël Aubry, Marie-Antoinette Di Forte-Poisson

Actes des 10èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2007, 2007, Lille, France. ⟨hal-00367413⟩

• Communication dans un congrès

Electronic, optical and transport properties of semiconductor nanowires : theory and simulations

Yann-Michel Niquet, Aurélien Lherbier, Martin P. Persson, François Triozon, Stéphane Roche, Mamadou Diarra, Christophe Delerue, Guy Allan

In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting…

397th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires : Physics, Materials and Devices, 2007, Bad Honnef, Germany. ⟨hal-00367404⟩

• Communication dans un congrès

Développement d'une mémoire non volatile à base de nanotubes de carbone multi-feuillets

David Brunel

Actes des 10èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2007, 2007, Lille, France. ⟨hal-00367414⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at…

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

• Article dans une revue

La teoria dei baricentri di Torricelli come fondamento della statica (Torricelli's theory of barycentre as a foundation of statics)

Danilo Capecchi, Raffaele Pisano

Physis; rivista internazionale di storia della scienza, 2007, XLIV (1), pp.1-29. ⟨hal-04508032⟩

• Communication dans un congrès

Système mixte fibre-radio à impulsions pour communications large bande multi-sauts en bande V

Christophe Loyez, N. Deparis, C. Lethien, R. Kassi, A. Goffin, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

15èmes Journées Nationales Microondes, JNM 2007, 2007, Unknown, France. pp.6B2-1-4. ⟨hal-00370306⟩

• Communication dans un congrès

Conception et réalisation de commutateurs MEMS RF pour antennes à faisceaux agiles

A. Boé, M. Fryziel, E. Herth, L. Le Garrec, N. Rolland, P.A. Rolland

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.7B3-1-4. ⟨hal-00370310⟩

• Communication dans un congrès

On wireless communication in tunnels

D.G. Dudley, S.F. Mahmoud, M. Lienard, Pierre Degauque

IEEE International Symposium on Antennas and Propagation, 2007, Honolulu, HI, United States. ⟨10.1109/APS.2007.4396243⟩. ⟨hal-00369924⟩