Publications

• Communication dans un congrès

Système mixte fibre-radio à impulsions pour communications large bande multi-sauts en bande V

Christophe Loyez, N. Deparis, C. Lethien, R. Kassi, A. Goffin, Jean-Pierre Vilcot, N. Rolland, P.A. Rolland

15èmes Journées Nationales Microondes, JNM 2007, 2007, Unknown, France. pp.6B2-1-4. ⟨hal-00370306⟩

• Communication dans un congrès

Conception et réalisation de commutateurs MEMS RF pour antennes à faisceaux agiles

A. Boé, M. Fryziel, E. Herth, L. Le Garrec, N. Rolland, P.A. Rolland

15èmes Journées Nationales Microondes, JNM 2007, 2007, France. pp.7B3-1-4. ⟨hal-00370310⟩

• Communication dans un congrès

On wireless communication in tunnels

D.G. Dudley, S.F. Mahmoud, M. Lienard, Pierre Degauque

IEEE International Symposium on Antennas and Propagation, 2007, Honolulu, HI, United States. ⟨10.1109/APS.2007.4396243⟩. ⟨hal-00369924⟩

• Article dans une revue

Atomic scale study of TbCo2.5/Fe multilayers by laser-assisted tomographic atom probe

A. Grenier, R. Larde, E. Cadel, F. Vurpillot, J. Juraszek, J. Teillet, Nicolas Tiercelin

Journal of Applied Physics, 2007, 102, pp.033912-1-4. ⟨10.1063/1.2761825⟩. ⟨hal-00255798⟩

• Article dans une revue

Low-temperature-grown GaAs : modeling of transient reflectivity experiments

V. Ortiz, J. Nagle, Jean-Francois Lampin, Emmanuel Peronne, Antigoni Alexandrou

Journal of Applied Physics, 2007, 102, pp.043515-1-9. ⟨10.1063/1.2763971⟩. ⟨hal-00283048⟩

• Article dans une revue

Comparison of structural and electrical properties of PMN-PT films deposited on Si with different bottom electrodes

M. Detalle, Gang Wang, Denis Remiens, P. Ruterana, P. Roussel, B. Dkhil

PMN-PT (70/30) thin films were deposited by sputtering on silicon substrate covered with different bottom electrodes: TiOx/Pt and LaNiO3 (LNO). The bilayers TiOx/Pt are deposited by sputtering and the LNO layer by sol–gel. Whatever the bottom electrodes the perovskite phase appears at 400 °C; the…

Journal of Crystal Growth, 2007, 305 (1), pp.137-143. ⟨10.1016/j.jcrysgro.2007.04.020⟩. ⟨hal-00176607⟩

• Article dans une revue

Characteristics of Al2O3/AllnN/GaN MOSHEMT

F Medjdoub, N. Sarazin, M. Tordjman, M. Magis, M.A. Di Forte-Poisson, M. Knez, E. Delos, Christophe Gaquière, S.L. Delage, E. Kohn

Electronics Letters, 2007, 43, pp.691-692. ⟨10.1049/el:20070425⟩. ⟨hal-00283495⟩

• Article dans une revue

A blind modulation type detector for DPRS standard

Iyad Dayoub, A. Okassa-M'Foubat, R. Mvone, Jean-Michel Rouvaen

Wireless Personal Communications, 2007, 41, pp.225-241. ⟨10.1007/s11277-006-9140-8⟩. ⟨hal-00283515⟩

• Article dans une revue

Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Francois Vaurette, J.P. Nys, B. Grandidier, C. Priester, D. Stiévenard

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.235435-1-6. ⟨10.1103/PhysRevB.75.235435⟩. ⟨hal-00283122⟩

• Article dans une revue

Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Malek Zegaoui, Joseph Harari, Nargess Choueib, V. Magnin, Didier Decoster

The ability of HSQ resist films to planarise active deep etched (1.5-2m) InP based structures with electrodes is demonstrated for the first time. Vertically etched III-V semiconductor devices require planarisation of the passivation material for metal interconnections and device integration. A new…

Electronics Letters, 2007, 43 (22), pp.1234-1236. ⟨10.1049/el:20071889⟩. ⟨hal-00283081⟩