Publications

• Article dans une revue

Effect of growth temperature on defect states of GaNAsSb intrinsic layer in GaAs/GaNAsSb/GaAs photodiode for 1.3µm application

Satrio Wicaksono, Soon Fatt Yoon, Wan Khai Loke, Kianhuan Tan, Kim Luong Lew, Malek Zegaoui, Jean-Pierre Vilcot, Didier Decoster, Jean Chazelas

A GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GaAsGaAsSbNGaAs p-i-n photodiode with response up to 1.3 μm. Deep level transient spectroscopy measurement on the GaAsGaAsSbNGaAs reveals two types of hole traps (HTs) in the GaAsSbN i layer; (i) HT1: a…

Journal of Applied Physics, 2007, 102 (4), pp.044505. ⟨10.1063/1.2769801⟩. ⟨hal-00283082⟩

• Article dans une revue

Gigahertz frequency flexible carbon nanotube transistors

N. Chimot, Vincent Derycke, M.F. Goffman, J.P. Bourgoin, H. Happy, Gilles Dambrine

Applied Physics Letters, 2007, 91, pp.153111-1-3. ⟨10.1063/1.2798583⟩. ⟨hal-00255759⟩

• Article dans une revue

Real-time in-situ flux monitoring in molecular beam epitaxy by wavelength-modulated atomic absorption spectroscopy

D. Vignaud

Journal of Vacuum Science and Technology, 2007, 25, pp.1398-1404. ⟨10.1116/1.2759948⟩. ⟨hal-00255782⟩

• Article dans une revue

A general model for analysis of acoustic phonons in piezoelectric super-lattices. Application to the (111)-AlAs/GaAs super-lattice

Victor Y. Zhang, Bahram Djafari-Rouhani

A general model is established for the analysis of acoustic phonons in an arbitrarily oriented piezoelectric super-lattice (SL). Analytical expressions are derived allowing the dispersion relation, transmission (T) and reflection (R) properties of the phonons to be numerically calculated for any…

Journal of Physics: Condensed Matter, 2007, 19 (18), pp.186209-1-17. ⟨10.1088/0953-8984/19/18/186209⟩. ⟨hal-00255745⟩

• Article dans une revue

Magnetoacoustic properties of self-biased Terfenol-D 2-2 composites

L. Garcia-Gancedo, S.C. Busbridge, Philippe Pernod, Vladimir Preobrazhensky

Journal of Applied Physics, 2007, 101 (9), pp.09C514. ⟨10.1063/1.2712028⟩. ⟨hal-00285633⟩

• Article dans une revue

X-ray photoelectron spectroscopy study of the oxidation of Se passivated Si(001)

F.S. Aguirre-Tostado, D. Layton, A. Herrera-Gomez, R.M. Wallace, J. Zhu, G. Larrieu, E. Maldonado, W.P. Kirk, M. Tao

Journal of Applied Physics, 2007, 102, pp.084901-1-7. ⟨10.1063/1.2794858⟩. ⟨hal-00255854⟩

• Article dans une revue

Kinetics, stoichiometry, morphology and current drive capabilities of Ir-based silicides

G. Larrieu, Emmanuel Dubois, X. Wallart, J. Katcki

Journal of Applied Physics, 2007, 102, pp.094504-1-7. ⟨10.1063/1.2802564⟩. ⟨hal-00255850⟩

• Article dans une revue

Raman imaging of doping domains in graphene on SiO2

C. Stampfer, L. Wirtz, A. Jungen, F. Molitor, D. Graf, C. Hierold, K. Ensslin

We present spatially resolved Raman images of the G and 2D lines of single-layer graphene flakes. The spatial fluctuations of G and 2D lines are correlated and are thus shown to be affiliated with local doping domains. We investigate the position of the 2D line – the most significant Raman peak to…

Applied Physics Letters, 2007, 91, pp.241907-1-3. ⟨10.1063/1.2816262⟩. ⟨hal-00283188⟩

• Communication dans un congrès

Silicon-based Biomimetic Flying Insect

Caroline Soyer, Sébastien Grondel, Anne-Christine Hladky, Thierry Dargent, Eric Cattan, Brieuc Danet, Thomas Rakotomamonjy, Dejan Vasic, Guylaine Poulin, Nicolas Marchand, Hala Rifai

FIR 2007 - International Symposium on Flying Insects and Robots, Aug 2007, Ascona, Switzerland. ⟨hal-00152448⟩

• Communication dans un congrès

Estimation of the surface potential of unstrained InAlN/GaN HEMT's

M. Alomari, F Medjdoub, E. Kohn, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, D. Ducatteau, Christophe Gaquière

Proceedings of the 16th European Workshop on Heterostructure Technology, HeTech'07, 2007, Fréjus, France. ⟨hal-00367698⟩