Publications

• Article dans une revue

Application of the FDTD method to determine complex permittivity of dielectric materials at microwave frequencies using a rectangular waveguide

J. Terhzaz, H. Ammor, A. Assir, A. Mamouni

A new measurement technique is presented to determine the complex permittivity of a dielectric material. The dielectric sample is loaded in a short-circuited rectangular waveguide. The reflection coefficient of the waveguide is measured by Network analyzer and calculated as a function of the…

Microwave and Optical Technology Letters, 2007, 49, pp.1964-1968. ⟨10.1002/mop.22611⟩. ⟨hal-00255766⟩

• Article dans une revue

Electrical characterizations of paraelectric BST thin films up to 1 THz : realization of microwave phase shifters

Gabriel Vélu, Gregory Houzet, Ludovic Burgnies, Jean-Claude Carru, Aurélien Marteau, Karine Blary, Didier Lippens, Patrick Mounaix, Marc Tondusson, Edwin Nguema Agnandji

BST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around 300 with quasi no frequency dispersion. In the 500 GHz to 1 THz range, the…

Ferroelectrics, 2007, 353 (1), pp.29-37. ⟨10.1080/00150190701367036⟩. ⟨hal-00285626⟩

• Communication dans un congrès

Wide-band fringe pattern projector using TeO2 acousto-optic deflectors

Samuel Dupont, Jean-Claude Kastelik, F. Causa

International Congress on Ultrasonics, ICU 2007, 2007, Austria. pp.1378. ⟨hal-00284005⟩

• Article dans une revue

Two types of modes in finite size one-dimensional coaxial photonic crystals : general rules and experimental evidence

E.H. El Boudouti, Y. El Hassouani, Bahram Djafari-Rouhani, H. Aynaou

We demonstrate analytically and experimentally the existence and behavior of two types of modes in finite size one-dimensional coaxial photonic crystals made of N cells with vanishing magnetic field on both sides. We highlight the existence of N−1 confined modes in each band and one mode by gap…

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2007, 76, pp.026607/1-9. ⟨10.1103/PhysRevE.76.026607⟩. ⟨hal-00283161⟩

• Article dans une revue

Another approach for partial parallel interference cancellation

M. Moussaoui, M. Zaizouni, Jean-Michel Rouvaen

Wireless Personal Communications, 2007, 42, pp.587-606. ⟨10.1007/s11277-006-9213-8⟩. ⟨hal-00283516⟩

• Article dans une revue

Minimizing energy consumption within wireless sensors networks

F. Shebli, Iyad Dayoub, Jean-Michel Rouvaen

Ubiquitous Computing and Communication Journal , 2007, Special Issue on Ubiquitous Sensor Networks, pp.1-6. ⟨hal-00283521⟩

• Communication dans un congrès

Mechanical and electrical characterization of benzocyclobutene membrane packaging

S. Seok, N. Rolland, P.A. Rolland

57th Electronic Components and Technology Conference, ECTC 2007, 2007, United States. pp.1685-1689, ⟨10.1109/ECTC.2007.374021⟩. ⟨hal-00284061⟩

• Communication dans un congrès

Coupling on-wafer measurement errors and their impact on calibration and de-embedding up to 110 GHz for CMOS millimeter wave characterizations

C. Andrei, D. Gloria, Francois Danneville, P. Scheer, Gilles Dambrine

IEEE International Conference on Microelectronic Test Structures, ICMTS'07, 2007, Japan. pp.253-256, ⟨10.1109/ICMTS.2007.374494⟩. ⟨hal-00284025⟩

• Article dans une revue

New flowmetric measurement methods of power dissipated by an ultrasonic generator in aqueus medium

Valérie Mancier, Didier Leclercq

Ultrasonics Sonochemistry, 2007, 14, pp.99-106. ⟨10.1016/j.ultsonch.2006.03.004⟩. ⟨hal-00255844⟩

• Article dans une revue

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Marie-Antoinette Di Forte-Poisson, Nicolas Sarazin, M. Magis, Maurice Tordjman, Erwan Morvan, Raphaël Aubry, J. Di Persio, Bertrand Grimbert

This paper reports on in situ passivation studies of GaAlN/GaN High electron mobility transistors (HEMT) structures grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire and silicon carbide substrates. GaN, GaAlN, AlN and AlN/GaN superlattice (SL) layers have been deposited…

Journal of Crystal Growth, 2007, 298, pp.826-830. ⟨10.1016/j.jcrysgro.2006.10.193⟩. ⟨hal-00285680⟩