Publications

• COMM

High resolution seismic investigation in salt mining context. Comparison of seismic sections

Bogdan Piwakowski, L. Driad-Lebeau, A. Kosecki

Proceedings of the 2007 Near-Surface International Symposium of European Association of Exploration Geophysicists, 2006, Helsinki, Finland. ⟨hal-00201151⟩

• COMM

Design of a X-band GaN oscillator : from the low frequency noise device characterization and large signal modeling to circuit design

Geoffroy Soubercaze-Pun, Jean-Guy Tartarin, Laurent Bary, Jacques Rayssac, E. Morvan, B. Grimbert, S.L. Delage, Jean-Claude de Jaeger, Jacques Graffeuil

2006, 4 pp. ⟨hal-00128228⟩

• COMM

Analyse physique de transistors HEMTs AlGaN/GaN élaborés avec la technologie field plate

Brahim Benbakhti, Michel Rousseau, J-C Gerbedoen, Jean-Claude de Jaeger

10èmes Journées de la Matière Condensée, Aug 2006, Toulouse, France. ⟨hal-00128165⟩

• ART

Averaging and oversampling correlator receiver with input quantization

Jean-Michel Rouvaen, B. El Khaldi, Atika Rivenq, Yassin El Hillali

Digital Signal Processing, 2006, 16, pp.120-136. ⟨hal-00128166⟩

• COMM

Radio over fibre networks : low cost solution for different applications and emerging technologies

Iyad Dayoub, Y. Zouin, A.O. M'Foubat, Jean-Michel Rouvaen, Jean-Pierre Vilcot, Didier Decoster

2nd IEEE International Conference on Information and Communication Technologies : from theory to applications, ICTTA'06, 2006, Damas, Syria. ⟨hal-00128180⟩

• ART

Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors

A. El Fatimy, F. Teppe, N. Dyakonova, W. Knap, D. Seliuta, G. Valusis, A. Shchepetov, Yannick Roelens, S. Bollaert, A. Cappy, S. Rumyantsev

Applied Physics Letters, 2006, 89, pp.131926-1-3. ⟨hal-00154920⟩

• ART

Tunable rectification and slope reversals in the I-V characteristics of ballistic nanojunctions

B. Hackens, L. Gence, S. Faniel, C. Gustin, X. Wallart, S. Bollaert, A. Cappy, V. Bayot

Physica E: Low-dimensional Systems and Nanostructures, 2006, 34, pp.515-518. ⟨hal-00154922⟩

• ART

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

Matthieu Werquin, Damien Ducatteau, Nicolas Vellas, E. Delos, Yvon Cordier, Raphaël Aubry, Christophe Gaquière

DC- and RF-pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the potential of…

Microwave and Optical Technology Letters, 2006, 48, pp.2303-2305. ⟨10.1002/mop.21897⟩. ⟨hal-00154928⟩

• COMM

Metamaterial-based devices at millimetre and sub-millimetre wavelengths

D. Lippens

2006, 4 pp. ⟨hal-00152963⟩

• COMM

Etude de l'efficacité de différents matériaux actifs utilisés à des fins d'amortissement de vibrations

C. Granger, Anne-Christine Hladky, M. Pham-Thi

2006, pp.977-980. ⟨hal-00140161⟩