Publications

• Article dans une revue

Transmission gaps and sharp resonant states in the electronic transport through a simple mesoscopic device

Housni Al-Wahsh, El Houssaine El Boudouti, Bahram Djafari-Rouhani, L. Dobrzynski, Abdellatif Akjouj

A simple electronic circuit consisting of a single symmetric or asymmetric loop with dangling resonators is designed to obtain possibly large stop bands (where the propagation of electrons is forbidden). Contrary to all known systems of this kind, a spectral transmission gap of nonzero width occurs…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (12), pp.125313. ⟨10.1103/PhysRevB.75.125313⟩. ⟨hal-00283159⟩

• Article dans une revue

Examination of operation of PZT-Film-Si-substrate structures as pyroactive memory elements

S.L. Bravina, N.V. Morozovsky, Denis Remiens, Caroline Soyer

Ferroelectrics, 2007, 353, pp.193-201. ⟨10.1080/00150190701368158⟩. ⟨hal-00285651⟩

• Communication dans un congrès

Investigation of wavelength GalnNAs 1300-1550 nm strained quantum wells on GaAs substrates

Abdelkader Aissat, Said Nacer, D. Berkani, Jean-Pierre Vilcot

1st WSEAS International Conference on Computational Chemistry, COMPUCHEM'07, Dec 2007, Cairo, Egypt. pp.115-119. ⟨hal-00362689⟩

• Article dans une revue

Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Z. Bougrioua, M. Laügt, P. Vennegues, I. Cestier, T. Gühne, E. Frayssinet, P. Gibart, M. Leroux

New conditions for one‐step ELO were implemented to grow coalesced (11equation image0) non‐polar and (11equation image2) semi‐polar GaN layers starting, respectively, from R ‐ and M ‐plane sapphire. A great part of the stacking faults (SFs) and dislocations are filtrated resulting in GaN material…

Physica Status Solidi A (applications and materials science), 2007, 204 (1), pp.282-289. ⟨10.1002/pssa.200673585⟩. ⟨hal-02906717⟩

• Article dans une revue

Wide-band acousto-optic deflectors with high efficiency for visible range fringe pattern projector

Samuel Dupont, Jean-Claude Kastelik, F. Causa

Review of Scientific Instruments, 2007, 78, pp.105102-1-4. ⟨10.1063/1.2793775⟩. ⟨hal-00255746⟩

• Communication dans un congrès

Modelling and design of surface acoustic waves in optical-quality multi-layer GaN structures

Q. Meng, F. Causa, J. Sarma, Samuel Dupont, Jean-Claude Kastelik, V. Zhang

Semiconductor and Integrated Optoelectronics Conference, SIOE'07, 2007, United Kingdom. paper 51. ⟨hal-00285686⟩

• Communication dans un congrès

Recent results on charge transport in molecular devices based on organic self-assembled monolayers

D. Vuillaume

10th International Conference on Advanced Materials, IUMRS-ICAM 2007, 2007, Bangalore, India. ⟨hal-00367335⟩

• Communication dans un congrès

GaN devices for high performance RF power amplifier

Christophe Gaquière, Brahim Benbakhti, S. Boulay, N. Defrance, Damien Ducatteau, H. Gerard, J-C Gerbedoen, Bertrand Grimbert, Virginie Hoel, J. Lemaitre, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger, F. Medjoub, Raphaël Aubry, Charu Dua, Christian Brylinski, Didier Floriot, G. Lecoustre, Erwan Morvan, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage

2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Oct 2007, Munich, Germany. ⟨hal-00367425⟩

• Communication dans un congrès

Laser doppler vibrometry for evaluating the piezoelectric coefficients d33 and d31 of PZT thin films

R. Herdier, D. Jenkins, El Hadj Dogheche, Denis Remiens, M. Sulk

Proceedings of the 19th International Symposium on Integrated Ferroelectrics, ISIF-19, 2007, Bordeaux, France. ⟨hal-00367387⟩

• Communication dans un congrès

Growth and characterization of AlInN/GaN field effect transistors

J.F. Carlin, F Medjdoub, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

Proceedings of the 7th International Conference of Nitride Semiconductors, ICNS-7, 2007, Las Vegas, NV, United States. ⟨hal-00367697⟩