Publications

Affichage de 12561 à 12570 sur 16092


  • Article dans une revue

Excitons in boron nitride nanotubes : dimensionality effects

L. Wirtz, A. Marini, A. Rubio

Physical Review Letters, 2006, 96, pp.126104/1-4. ⟨hal-00127833⟩

  • Communication dans un congrès

Modélisation d'un filtre optique compact formé d'un microguide couplé à un stub

Yan Pennec, Maxime Beaugeois, Bahram Djafari-Rouhani, Abdellatif Akjouj, B. Ait Ouali, Jerome O. Vasseur, L. Dobrzynski, Jean-Pierre Vilcot, Mohamed Bouazaoui

10èmes Journées de la Matière Condensée, Aug 2006, Toulouse, France. ⟨hal-00127886⟩

  • Communication dans un congrès

Role of interfaces on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions

D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi

Materials Research Society Spring Meeting, 2006, San Francisco, CA, United States. ⟨hal-00127160⟩

  • Communication dans un congrès

Switching properties at nanoscale : on the influence of the intrinsic finite size effect

Laurent Baudry

International Symposium on Integrated Ferroelectrics, ISIF 2006, 2006, Honolulu, Hawaii, United States. ⟨hal-00128182⟩

  • Article dans une revue

High order explicit versus quasi-linear implicit finite-difference approximation for semiconductor device time-domain macroscopic modelling on parallel computer

A. El Moussati, Christophe Dalle

Journal of Computational Electronics, 2006, 5, pp.235-240. ⟨hal-00128187⟩

  • Communication dans un congrès

Homodyne dual six-port network analyzer and associated calibration technique for millimeter wave measurement

Kamel Haddadi, D. Glay, T. Lasri

2006, 4 pp. ⟨hal-00126826⟩

  • Article dans une revue

Terahertz detection by GaN/AlGaN transistors

Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, D. Theron, A. Cappy

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K For the lowest temperatures, a…

Electronics Letters, 2006, 42, pp.1342-1344. ⟨10.1049/cl:20062452⟩. ⟨hal-00540638⟩

  • Article dans une revue

Electrical property evaluation of manganese-fluorine codoping of lead zirconate titanate thin films : compatibility between hard material and piezoelectric activity

M. Detalle, Denis Remiens, L. Lebrun, D. Guyomar

Journal of Applied Physics, 2006, 100, pp.094102-1-5. ⟨hal-00138713⟩