Publications
Affichage de 12651 à 12660 sur 16109
Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?
F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn
IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩
Terahertz detection by GaN/AlGaN transistors
Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, D. Theron, A. Cappy
Electronics Letters, 2006, 42, pp.1342-1344. ⟨10.1049/cl:20062452⟩. ⟨hal-00540638⟩
Electrical, morphological and electromechanical properties of conductive-polymer fibres (yarns)
B. Kim, V. Koncar, C. Dufour
Mattila H.R. Intelligent Textiles and Clothing, Woodhead Publishing Ltd, Cambridge, UK, pp.308-323, 2006. ⟨hal-00577013⟩
Sensitivity comparison of multicarrier and spread spectrum systems to phase noise
C. Garnier, M. Loosvelt, Y. Delignon
Fazel K., Kaiser S. Multi-Carrier Spread-Spectrum, Proceedings from the 5th International Workshop, Oberpfaffenhofen, Germany, september 14-16, 2005, Springer, pp.491-502, 2006. ⟨hal-00577012⟩
Enhanced protein capture by ultrafast SAW droplet micromixing
E. Galopin, A. Renaudin, V. Thomy, J.C. Camart, P. Tabourier, C. Druon
2006, pp.651-653. ⟨hal-00140372⟩
One-bit correlator receiver and averaging-oversampling effects
B. El Khaldi, Jean-Michel Rouvaen, Atika Rivenq, Yassin El Hillali
Digital Signal Processing, 2006, 16, pp.120-136. ⟨hal-00138725⟩
Contributions à la conception et à la réalisation de transistors MOS à grille multiple
J. Penaud
2006. ⟨hal-00138699⟩
Nonlinear behavior in left-handed transmission lines
M.F. Foulon, J.M. Duchamp, X. Mélique, Philippe Ferrari, D. Lippens
3rd Workshop on Metamaterials and special materials for electromagnetic applications and TLC, Third Workshop on Metamaterials, 2006, ROME, Italy. pp.XX. ⟨hal-00147885⟩
High current drive in ultra-short impact ionization MOS (I-MOS) devices
C. Charbuillet, S. Monfray, Emmanuel Dubois, P. Bouillon, T. Skotnicki
2006, paper 6.2. ⟨hal-00138690⟩
Large optimisation of source/drain architecture in double gate CMOS using combined static and transient analysis
Christophe Krzeminski, Emmanuel Dubois
Materials Research Society Spring Meeting, MRS Spring 2006, Transistor Scaling - Methods, Materials, and Modeling, 2006, Moscone West, San-Franscico, CA, United States. ⟨hal-00138694⟩