Publications

Affichage de 12781 à 12790 sur 16278


  • Communication dans un congrès

Efficient spreading code allocation strategy for a downlink MC-CDMA system in a time varying frequency selective channel

H. El Ghazi, C. Garnier, Y. Delignon

2006, 5 pp. ⟨hal-00154925⟩

  • Article dans une revue

Terahertz detection by GaN/AlGaN transistors

Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, D. Theron, A. Cappy

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K For the lowest temperatures, a…

Electronics Letters, 2006, 42, pp.1342-1344. ⟨10.1049/cl:20062452⟩. ⟨hal-00540638⟩

  • Autre publication scientifique

Jonctions nanométriques à base d'électrodes ou de nanofils en siliciure de titane

T. Soubiron

2006. ⟨hal-00162822⟩

  • Communication dans un congrès

Caractérisation de nanofils de Si par sonde atomique tomographique

R. Lardé, J. Houard, E. Cadel, P. Pareige, D. Hourlier, D. Stievenard

10èmes Journées de la Matière Condensée, 2006, Toulouse, France. ⟨hal-00243976⟩

  • Communication dans un congrès

Catalytic growth of silicon nanowires supported on high surface oxide substrates

D. Hourlier, P. Lefebvre, A. Addad, R.N. Vannier, P. Perrot

Matériaux 2006, 2006, Dijon, France. ⟨hal-00243979⟩

  • Communication dans un congrès

Raman spectroscopy and AFM characterization on individual Si-based nanowires

M. Marczak, M. Zdrojek, W. Gebicki, C. Jastrzebski, Thierry Melin, D. Hourlier

European Material Research Society Spring Meeting, E-MRS - IUMRS - ICEM 06, Symposium E : Science and Technology of Nanotubes and Nanowires, 2006, Nice, France. ⟨hal-00243973⟩

  • Article dans une revue

Water exclusion at the nanometer scale provides long term passivation of silicon(111) grafted with alkyl monolayers

P. Gorostiza, C. Henry de Villeneuve, Q.Y. Sun, F. Sanz, X. Wallart, Rabah Boukherroub, P. Allongue

Journal of Physical Chemistry B, 2006, 110, pp.5576-5585. ⟨hal-00127062⟩

  • Communication dans un congrès

On the crucial role of the insulator-semiconductor interface in organic thin film transistors

G. Horowitz, M. Mottaghi, P. Lang, F. Rodriguez, A. Yassar, S. Lenfant, D. Vuillaume

SPIE Annual Meeting, Symposium on Organic Field-Effect Transistors V, 2006, San Diego, CA, United States. ⟨hal-00127155⟩