Publications

• Communication dans un congrès

Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scattering spectroscopy and transient interferometric mapping

E. Pichonat, J. Kuzmik, S. Bychikhin, D. Pogany, M.A. Poisson, B. Grimbert, Christophe Gaquière

1st European Microwave Integrated Circuits Conference, EuMIC 2006, 2006, United Kingdom. pp.54-57, ⟨10.1109/EMICC.2006.282748⟩. ⟨hal-00247418⟩

• Communication dans un congrès

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn

IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩

• Communication dans un congrès

On the use of a performance indicator for optimal pilot positioning in multicarrier systems

David Buèche, Patrick Corlay, Marc G. Gazalet, François-Xavier Coudoux, Marc Slachciak

We have recently proposed a simple performance indicator for discrete multitone systems, which accounts for the channel estimation error, the emitted power and the noise level. It shows a much better correlation with the bit error rate (BER) than the more classical mean square error (MSE) while…

13th International Conference on Electronics, Circuits and Systems, ICECS 2006, Dec 2006, Nice, France. pp.978-981, ⟨10.1109/ICECS.2006.379954⟩. ⟨hal-00247417⟩

• Article dans une revue

Numerical modeling of TeraHertz electronic devices

L. Varani, C. Palermo, J.-F. Millithaler, J.-C. Vaissière, E. Starikov, P. Shiktorov, V. Gruzinskis, J. Mateos, S. Perez, D. Pardo, T. Gonzalez

Journal of Computational Electronics, 2006, 5 (2-3), pp.71-77. ⟨10.1007/s10825-006-8822-5⟩. ⟨hal-00328552⟩

• Article dans une revue

High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 µm

Patrick Mounaix, Marc Tondusson, Nicolas Chimot, Juliette Mangeney, Karine Blary, Jean-Francois Lampin

The performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth.…

Electronics Letters, 2006, 42 (15), pp.879-880. ⟨10.1049/el:20061529⟩. ⟨hal-00162819⟩

• Autre publication scientifique

Jonctions nanométriques à base d'électrodes ou de nanofils en siliciure de titane

T. Soubiron

2006. ⟨hal-00162822⟩

• Article dans une revue

Terahertz detection by GaN/AlGaN transistors

Abdelouahad El Fatimy, Stephane Boubanga Tombet, Frederic Teppe, Wojciech Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Christophe Gaquière, D. Theron, A. Cappy

Detection of subterahertz and terahertz radiation by high electron mobility GaN/AlGaN transistors in the 0.2-2.5 THz frequency range (much higher than the cutoff frequency of the transistors) is reported. Experiments were performed in the temperature range 4-300 K For the lowest temperatures, a…

Electronics Letters, 2006, 42, pp.1342-1344. ⟨10.1049/cl:20062452⟩. ⟨hal-00540638⟩

• Communication dans un congrès

Performance of IR-UWB at 60 GHz for ad hoc networks with directive antennas

H. El Ghannudi, Laurent Clavier, A. Bendjaballah, A. Boé, P.A. Rolland

2006, 6 pp. ⟨hal-00147517⟩

• Article dans une revue

Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications

M. Si Moussa, C. Pavageau, D. Lederer, L. Picheta, Francois Danneville, N. Fel, J. Russat, J.P. Raskin, D. Vanhoenacker-Janvier

Solid-State Electronics, 2006, 50, pp.1822-1827. ⟨hal-00147509⟩

• Communication dans un congrès

Smart antenna based on RF MEMS switches and printed Yagi-Uda antennas for 6O GHz ad hoc WPAN

A. Boé, M. Fryziel, N. Deparis, Christophe Loyez, N. Rolland, P.A. Rolland

2006, pp.310-313. ⟨hal-00147514⟩