Publications

• Article dans une revue

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D.C. Bensahel

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory…

IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩

• Article dans une revue

Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs

J. Penaud, F. Fruleux, Emmanuel Dubois

Keeping in line with Moore's law requires increasing efforts in the development of alternative electronic devices. Multiple-gate transistors are very promising in order to suppress short-channel effects and to increase the current drive. Nevertheless, the fabrication of such devices represents…

Applied Surface Science, 2006, 253 (1), pp.395-399. ⟨10.1016/j.apsusc.2006.06.021⟩. ⟨hal-00138654⟩

• Article dans une revue

Tunable BST capacitor loss compensation using active circuit

Mahmoud Al Ahmad, Nathalie Rolland, Paul-Alain Rolland

The compensation of the ohmic and the material dielectric losses in a barium strontium titanate (BST) capacitor using an active circuit is reported in this letter. The negative resistance (NR) circuit creates an effective conductance of -|G n | which adds to the positive conductance of the passive…

IEEE Microwave and Wireless Components Letters, 2006, 16, pp.549-551. ⟨hal-00154924⟩

• Article dans une revue

Investigation of traps in AlGaN/GaN HEMTs by current transient spectroscopy

M. Gassoumi, J.M. Bluet, F. Chekir, I. Dermoul, H. Maaref, G. Guillot, A. Minko, Virginie Hoel, Christophe Gaquière

Materials Science and Engineering: C, 2006, 26, pp.SI : 383-386. ⟨hal-00154931⟩

• Article dans une revue

Small-signal characteristics of AlInN/GaN HEMTs

F Medjdoub, J.F. Carlin, M. Gonschorek, M.A. Py, N. Grandjean, S. Vandenbrouck, Christophe Gaquière, Jean-Claude de Jaeger, E. Kohn

Electronics Letters, 2006, 42, pp.779-780. ⟨hal-00154929⟩

• Communication dans un congrès

Nanopatterning of InP(001) surface using e-beam lithography to localize InAs quantum dots for single photon source application

A. Turala, P. Rojo-Romeo, P. Regreny, M. Gendry, C. Priester

2006, 2 pp. ⟨hal-00152961⟩

• Article dans une revue

Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800 nm wavelength

Nicolas Chimot, Juliette Mangeney, Patrick Mounaix, Marc Tondusson, Karine Blary, Jean-Francois Lampin

The authors investigate the generation and the detection of terahertz radiation by Br+-irradiated In0.53Ga0.47As photoconductive antennas using an optical excitation at 800nm wavelength. The detected temporal wave form presents a full width at half maximum of 650fs. The signal-to-noise ratio and…

Applied Physics Letters, 2006, 89, pp.83519-1-3. ⟨10.1063/1.2338538⟩. ⟨hal-00162817⟩

• Autre publication scientifique

Conception, réalisation et caractérisation des microcanaux pour les applications microfluidiques

M. Gaudet

2006. ⟨hal-00138941⟩

• Article dans une revue

Combined annealing temperature and thickness effects on properties of PbZr0.53Ti0.47O3 films on LaNiO3/Si substrate by sol-gel process

Gang Wang, Denis Remiens, Caroline Soyer

Journal of Crystal Growth, 2006, 293, pp.370-375. ⟨hal-00138712⟩

• Communication dans un congrès

An electronically tunable bandpass BAW-filter for a zero-IF WCDMA receiver

S. Razafimandimby, C. Tilhac, A. Cathelin, A. Kaiser, D. Belot

2006, pp.142-145. ⟨hal-00138678⟩