Publications

• Communication dans un congrès

Growth of molecular nanostructures on Si using SAMs of long-chain alkytrichlorosilanes

L. Patrone, S. Desbief, D. Goguenheim, D. Vuillaume

Trends in NanoTechnologies, TNT2006, 2006, Grenoble, France. ⟨hal-00127136⟩

• Communication dans un congrès

The effects of self-assembled monolayers gate dielectrics treatment on pentacene thin film transistor characteristics

K. Lmimouni, R. Bianchini, S. Lenfant, David Troadec, D. Vuillaume

International Conference on Organic Electronics, 2006, Eindhoven, Netherlands. ⟨hal-00127134⟩

• Communication dans un congrès

Impact of phase and timing jitter on IFDMA systems

E. Simon, Rodolphe Le Gouable, Maryline Hélard, M. Lienard

IEEE 17th International Symposium on Personal, Indoor and Mobile Radio Communications, PIMRC 2006, Sep 2006, Helsinki, Finland. 5 p. ⟨hal-00400242⟩

• Article dans une revue

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D.C. Bensahel

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory…

IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩

• Article dans une revue

An optimal high contrast e-beam lithography process for the patterning of dense fin networks

F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller

There are many difficulties to overcome towards the integration of 10 nm CMOS technology. One such major challenge is to keep a tight control of the leakage current of devices while increasing the current drive at a reduced supply voltage. In this context, multi-gated structures, which are used to…

Materials Science and Engineering: C, 2006, 26 (5-7), pp.893-897. ⟨10.1016/j.msec.2005.09.017⟩. ⟨hal-00138653⟩

• Article dans une revue

Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs

J. Penaud, F. Fruleux, Emmanuel Dubois

Keeping in line with Moore's law requires increasing efforts in the development of alternative electronic devices. Multiple-gate transistors are very promising in order to suppress short-channel effects and to increase the current drive. Nevertheless, the fabrication of such devices represents…

Applied Surface Science, 2006, 253 (1), pp.395-399. ⟨10.1016/j.apsusc.2006.06.021⟩. ⟨hal-00138654⟩

• Article dans une revue

Small-signal characteristics of AlInN/GaN HEMTs

F Medjdoub, J.F. Carlin, M. Gonschorek, M.A. Py, N. Grandjean, S. Vandenbrouck, Christophe Gaquière, Jean-Claude de Jaeger, E. Kohn

Electronics Letters, 2006, 42, pp.779-780. ⟨hal-00154929⟩

• Article dans une revue

Tunable BST capacitor loss compensation using active circuit

Mahmoud Al Ahmad, Nathalie Rolland, Paul-Alain Rolland

The compensation of the ohmic and the material dielectric losses in a barium strontium titanate (BST) capacitor using an active circuit is reported in this letter. The negative resistance (NR) circuit creates an effective conductance of -|G n | which adds to the positive conductance of the passive…

IEEE Microwave and Wireless Components Letters, 2006, 16, pp.549-551. ⟨hal-00154924⟩

• Communication dans un congrès

Phase conjugation of the second harmonic in a sound beam propagating through an immersed elastic solid with rough surfaces

M. Stone, Olivier Bou Matar, M. Hamilton, Vladimir Preobrazhensky, Philippe Pernod

2006, pp.284-287. ⟨hal-00138607⟩

• Communication dans un congrès

High quality factors of silicon membranes with piezoelectric actuation and detection scheme for biosensing purpose in liquid media

Cédric Ayela, Thierry Leichle, C. Bergaud, Liviu Nicu, Eric Cattan, Caroline Soyer, M. Pugniere

2006, 6 pp. ⟨hal-00147730⟩