Publications

• Article dans une revue

An open design microfabricated nib-like nanoelectrospray emitter tip on a conduction silicon substrate for the application of the ionization voltage

S. Le Gac, C. Rolando, S. Arscott

Journal of The American Society for Mass Spectrometry, 2006, 17, pp.75-80. ⟨hal-00128664⟩

• Communication dans un congrès

Large signal microwave characterization of GaN HEMTs

D. Theron, M. Werquin, B. Grimbert, D. Ducatteau, S. Vandenbrouck, Christophe Gaquière

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD'06, 2006, Phoenix, AZ, United States. ⟨hal-00128163⟩

• Article dans une revue

A study on power and bit assignment of embedded multi-carrier modulation schemes for hierarchical image transmission over digital subscriber line

C. Goudemand, François-Xavier Coudoux, Marc G. Gazalet

IEICE Transactions on Communications, 2006, E89-B, pp.2071-2073. ⟨hal-00128171⟩

• Communication dans un congrès

Switching properties at nanoscale : on the influence of the intrinsic finite size effect

Laurent Baudry

International Symposium on Integrated Ferroelectrics, ISIF 2006, 2006, Honolulu, Hawaii, United States. ⟨hal-00128182⟩

• Article dans une revue

High order explicit versus quasi-linear implicit finite-difference approximation for semiconductor device time-domain macroscopic modelling on parallel computer

A. El Moussati, Christophe Dalle

Journal of Computational Electronics, 2006, 5, pp.235-240. ⟨hal-00128187⟩

• Communication dans un congrès

Electronic excitations in hexagonal layered systems (C and BN)

L. Wirtz

2nd International School and Workshop on Time-Dependent Density Functional Theory : Prospects and Applications, 2006, Benasque, Spain. ⟨hal-00127912⟩

• Article dans une revue

Room-temperature Terahertz Emission from Nanometer Field Effect Transistors

N. Dyakonova, A. El Fatimy, J. Lusakowski, W. Knap, Michel Dyakonov, M.-A. Poisson, E. Morvan, S. Bollaert, A. Shchepetov, Yannick Roelens, Christophe Gaquière, D. Theron, A. Cappy

Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is…

Applied Physics Letters, 2006, 88 (14), pp.141906. ⟨10.1063/1.2191421⟩. ⟨hal-00264792⟩

• Article dans une revue

One-bit correlator receiver and averaging-oversampling effects

B. El Khaldi, Jean-Michel Rouvaen, Atika Rivenq, Yassin El Hillali

Digital Signal Processing, 2006, 16, pp.120-136. ⟨hal-00138725⟩

• Article dans une revue

Preparation and characterizations of Pb(Zr0.53Ti0.47)O3 thick films on LaNiO3 coated Si by modified metallorganic decomposition process

G.S. Wang, Denis Remiens, Caroline Soyer, El Hadj Dogheche, Eric Cattan

Integrated Ferroelectrics, 2006, 80, pp.11-20. ⟨hal-00138744⟩

• Autre publication scientifique

Elaboration et application d'une méthode de faisceau équivalent pour l'étude des couplages électromagnétiques sur réseaux de câblages automobiles

Guillaume Andrieu

2006. ⟨hal-00140178⟩