Publications

• Article dans une revue

Packaging methodology for RF devices using a BCB membrane transfert technique

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2006, 16, pp.2384-2388. ⟨hal-00126798⟩

• Article dans une revue

Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire

Tobias Guhne, Zahia Bougrioua, Martin Albrecht, Phillippe Vennéguès, Mathieu Leroux, Marguerite Laügt, Sosse Ndiaye, Monique Teisseire, Luan Nguyen, Pierre Gibart

Optical properties of GaN templates grown by the Epitaxial Lateral Overgrowth (ELO) technique along the nonpolar (1120) and the semipolar (1122) directions on R- and M-sapphire were investigated. Spatially resolved Cathodoluminescence (CL) was carried out in order to identify defect related…

MRS Online Proceedings Library, 2006, 955, ⟨10.1557/PROC-0955-I12-04⟩. ⟨hal-02906702⟩

• Article dans une revue

Fabrication and room-temperature single-charging behavior of self-aligned single-dot memory devices

Xing Tang, N. Reckinger, V. Bayot, Christophe Krzeminski, Emmanuel Dubois, A. Villaret, D.C. Bensahel

Self-aligned single-dot memory devices and arrays were fabricated based on arsenic-assisted etching and oxidation effects. The resulting device has a floating gate of about 5-10 nm, presenting single-electron memory operation at room temperature. In order to realize the final single-electron memory…

IEEE Transactions on Nanotechnology, 2006, 5 (6), pp.649-656. ⟨10.1109/TNANO.2006.883481⟩. ⟨hal-00138655⟩

• Communication dans un congrès

Growth of molecular nanostructures on Si using SAMs of long-chain alkytrichlorosilanes

L. Patrone, S. Desbief, D. Goguenheim, D. Vuillaume

Trends in NanoTechnologies, TNT2006, 2006, Grenoble, France. ⟨hal-00127136⟩

• Communication dans un congrès

The effects of self-assembled monolayers gate dielectrics treatment on pentacene thin film transistor characteristics

K. Lmimouni, R. Bianchini, S. Lenfant, David Troadec, D. Vuillaume

International Conference on Organic Electronics, 2006, Eindhoven, Netherlands. ⟨hal-00127134⟩

• Communication dans un congrès

InP digital optical switch with 40dB crosstalk at 1.55µm wavelength

Malek Zegaoui, Joseph Harari, Didier Decoster, Jean Chazelas

A New InP Digital Optical Switch especially designed for high crosstalks is proposed. More than 40dB crosstalk can be achieved at 1.55μm wavelength for switching current ranging from 35 to 90mA, depending on the optical polarisation.

2006 European Conference on Optical Communications, Sep 2006, Cannes, France. pp.215-216, ⟨10.1109/ECOC.2006.4801240⟩. ⟨hal-00138750⟩

• Article dans une revue

La Science et l'Hypothèse di J–H. Poincaré. Note epistemologiche (J–H. Poincaré's La Science et l'Hypothèse. Epistemological Notes) Rivista di Epistemologia Didattica I/1, 279–300

Raffaele Pisano

• Communication dans un congrès

Impact of phase and timing jitter on IFDMA systems

E. Simon, Rodolphe Le Gouable, Maryline Hélard, M. Lienard

IEEE 17th International Symposium on Personal, Indoor and Mobile Radio Communications, PIMRC 2006, Sep 2006, Helsinki, Finland. 5 p. ⟨hal-00400242⟩

• Article dans une revue

An optimal high contrast e-beam lithography process for the patterning of dense fin networks

F. Fruleux, J. Penaud, Emmanuel Dubois, M. Francois, M. Muller

There are many difficulties to overcome towards the integration of 10 nm CMOS technology. One such major challenge is to keep a tight control of the leakage current of devices while increasing the current drive at a reduced supply voltage. In this context, multi-gated structures, which are used to…

Materials Science and Engineering: C, 2006, 26 (5-7), pp.893-897. ⟨10.1016/j.msec.2005.09.017⟩. ⟨hal-00138653⟩

• Article dans une revue

Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs

J. Penaud, F. Fruleux, Emmanuel Dubois

Keeping in line with Moore's law requires increasing efforts in the development of alternative electronic devices. Multiple-gate transistors are very promising in order to suppress short-channel effects and to increase the current drive. Nevertheless, the fabrication of such devices represents…

Applied Surface Science, 2006, 253 (1), pp.395-399. ⟨10.1016/j.apsusc.2006.06.021⟩. ⟨hal-00138654⟩