Publications

• Communication dans un congrès

Molecular-scale electronics : status and perspectives

D. Vuillaume

2nd International Nanotechnology Conference, NSF-NNI, 2006, Arlington, United States. ⟨hal-00127158⟩

• Article dans une revue

Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy

Philippe Vennegues, Zahia Bougrioua

The absolute epitaxial relationships between III-nitride films and R-plane sapphire are investigated using convergent beam electron diffraction. The resulting relationships are found to be[1−100]III-N‖‖[11−20]sapphire and [0001]III-N‖‖[−1101]sapphire, respectively. The O–Al bonds in the sapphire…

Applied Physics Letters, 2006, 89, pp.111915. ⟨10.1063/1.2353810⟩. ⟨hal-02906710⟩

• Communication dans un congrès

Nanostructured self-assembled monolayers of long-chain alkyltrichlorosilanes on Si

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

International Conference on Nano-structures Self-assembling, 2006, Aix-en-Provence, France. ⟨hal-00127135⟩

• Communication dans un congrès

65 nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to 220 GHz

F. Gianesello, D. Gloria, S. Montusclat, C. Raynaud, S. Boret, C. Clement, S. Dambrine, Sylvie Lepilliet, F. Saguin, P. Scheer, P. Benech, J.M. Fournier

2006, 4 pp. ⟨hal-00154919⟩

• Article dans une revue

Well-Defined Carboxyl-Terminated Alkyl Monolayers Grafted onto H−Si(111): Packing Density from a Combined AFM and Quantitative IR Study

Anne Faucheux, Anne Chantal Gouget-Laemmel, Catherine Henry de Villeneuve, Rabah Boukherroub, François Ozanam, Philippe Allongue, Jean-Noël Chazalviel

This work demonstrates that well-defined mixed carboxyl-terminated/methyl-terminated alkyl monolayers can be prepared in one step on H-terminated Si(111) via direct photochemical hydrosilylation of undecylenic acid and 1-decene mixtures. As evidenced by AFM imaging and IR spectroscopy, a final…

Langmuir, 2006, 22 (1), pp.153-162. ⟨10.1021/la052145v⟩. ⟨hal-04166426⟩

• Communication dans un congrès

FENOTIP: microfluidique et nanoélectrode pour la spectroscopie électromagnétique de cellules uniques

Bertrand Bocquet, Vincent Senez, A. Treizebre, Hind Ghandour, Dominique Legrand, Joël Mazurier, Christian Slomianny, Eric Leclercq, Dominique Barthès-Biesel

Journées du Réseau National en Nanosciences et Nanotechnologies, R3N, 2006, Besançon, France. ⟨hal-00130887⟩

• Article dans une revue

A Bi-stable Micro-machined Piezoelectric Transducer for Mechanical to Electrical Energy Transformation

Karim Dogheche, B. Cavallier, P. Delobelle, L. Hirsinger, Eric Cattan, Denis Remiens, M. Marzencki, B. Charlot, Skandar Basrour, S. Ballandras

The development of micro-machined ultrasonic transducers on silicon opens new appli-cation fields for Si-based acoustic sensors operating in air or in liquids. In this work, wedescribe the fabrication of piezoelectric micro-machined ultrasonic transducers (pMUT)first dedicated to ultrasonic imaging…

Integrated Ferroelectrics, 2006, 80, pp.305-315. ⟨10.1080/10584580600659878⟩. ⟨hal-00135742⟩

• Communication dans un congrès

High crosstalk InP digital optical switch for microwave application

Malek Zegaoui, Joseph Harari, D. Lauvernier, Didier Decoster, Jean Chazelas

Because electro-optic switches are key elements for the synthesis of large bandwidth, high dynamic, true time delay optically controlled microwave antennas, we designed, fabricated and characterized a new digital optical switch grown on InP substrate, and based on carrier-induced effects. The…

Advanced Free-Space Optical Communication Techniques/Applications II and Photonic Components/Architectures for Microwave Systems and Displays, Sep 2006, Stockholm, Sweden. pp.63990M-1-4. ⟨hal-00147744⟩

• Communication dans un congrès

Optimal bit rate adaptation for layered video transmission over spectrally shaped channels using multicarrier modulation

C. Goudemand, François-Xavier Coudoux, Marc G. Gazalet

2006, pp.13-16. ⟨hal-00147739⟩

• Communication dans un congrès

Study of field plate AlGaN/GaN HEMTs by means of a 2D-hydrodynamic model for power applications

Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger

Field plate AlGaN/GaN HEMT (high electron mobility transistor) structures, are very promising to improve the microwave power performance. This device permits to improve the breakdown voltage but the field plate (FP) electrode involves an increase of the parasitic capacitances and consequently a…

European Microwave Integrated Circuits Conference, Sep 2006, Manchester, United Kingdom. 4 pp., ⟨10.1109/EMICC.2006.282657⟩. ⟨hal-00152973⟩