Publications

• Article dans une revue

Mo-enhanced passivity of stainless steels studied at metal/oxide interfaces by DFT atomistic modeling

Xian Huang, Dominique Costa, Vincent Maurice, Philippe Marcus

Applied Surface Science, 2026, 716, ⟨10.1016/j.apsusc.2025.164709⟩. ⟨hal-05322240⟩

• Pré-publication, Document de travail

SPARK-IL: Spectral Retrieval-Augmented RAG for Knowledge-driven Deepfake Detection via Incremental Learning

Hessen Bougueffa Eutamene, Abdellah Zakaria Sellam, Abdelmalik Taleb-Ahmed, Abdenour Hadid

Detecting AI-generated images remains a significant challenge because detectors trained on specific generators often fail to generalize to unseen models; however, while pixel-level artifacts vary across models, frequency-domain signatures exhibit greater consistency, providing a promising…

2026. ⟨hal-05596260⟩

• Chapitre d'ouvrage

Path eigenfunction localization and sensing

Abdellatif Akjouj, Housni Al-Wahsh, Eman Abdel-Ghaffar, Madiha Amrani, Leonard Dobrzyński

Leonard Dobrzynski. Sensing, Elsevier, pp.39-70, 2026, Interface Transmission Tutorial Book Series, Sensing Long-Lived Resonances, 978-0-443-32944-9. ⟨10.1016/B978-0-44-332944-9.00013-X⟩. ⟨hal-05569940⟩

• Chapitre d'ouvrage

Chapter 2. Electromagnetic wave to material interaction and microwave materials measurements

Kamel Haddadi, Malgorzata Celuch

Electromagnetic Interference Shielding Materials, Electromagnetic Interference Shielding Materials Graphene-Based Composites and Beyond Woodhead Publishing Series in Electronic and Optical Materials, Elsevier, pp.3-28, 2026, ISBN: 978-0-443-36630-7. ⟨10.1016/B978-0-443-36630-7.00004-1⟩. ⟨hal-05619825⟩

• Article dans une revue

0.53 mΩ.cm 2 /592 V High Breakdown Voltage GaN-on-Sapphire Schottky Diodes Without Edge Termination

Hugo Bouillaud, Beatriz Orfao, Etienne Okada, Yannick Roelens, Malek Zegaoui, Mohammed Zaknoune

In this letter, we report high-performance Pt/GaN quasi-vertical Schottky barrier diodes on sapphire substrate. With a 5 μm drift layer and a highly controlled fabrication process, the devices demonstrate an extremely low on-resistance of 0.53 mΩ.cm² while exhibiting a high breakdown voltage of 592…

IEEE Electron Device Letters, 2026, pp.1-1. ⟨10.1109/LED.2026.3652934⟩. ⟨hal-05484994⟩

• Chapitre d'ouvrage

Fundamentals of magnetic field sensing using ferromagnetic thin films and elastic waveguides

Aurélien Mazzamurro, Abdelkrim Talbi, Olivier Bou Matar, Othmane Marbouh, Mohamed Boutghatin, Mohammed Moutaouekkil, Gaetan Sanchez, Noura Ezzahni, El Houssaine El Boudouti, Yannick Dusch, Nicolas Tiercelin, Philippe Pernod

Sensing, Elsevier, pp.357-403, 2026, ⟨10.1016/B978-0-44-332944-9.00026-8⟩. ⟨hal-05576867⟩

• Chapitre d'ouvrage

On-off tunable generic system

Eman Abdel-Ghaffar, Housni Al-Wahsh, Abdellatif Akjouj, Madiha Amrani, Leonard Dobrzyński

Leonard Dobrzynski. Sensing Long-Lived Resonances, Elsevier, pp.129-144, 2026, Interface Transmission Tutorial Book Series, Sensing Long-Lived Resonances, 978-0-443-32944-9. ⟨10.1016/B978-0-44-332944-9.00017-7⟩. ⟨hal-05569965⟩

• Chapitre d'ouvrage

One closed loop and two infinite leads

Abdellatif Akjouj, Eman Abdel-Ghaffar, Housni Al-Wahsh, Madiha Amrani, Leonard Dobrzyński

Leonard Dobrzynski. Sensing Long-Lived Resonances, Elsevier, pp.145-162, 2026, Interface Transmission Tutorial Book Series, Sensing Long-Lived Resonances, 978-0-443-32944-9. ⟨10.1016/B978-0-44-332944-9.00018-9⟩. ⟨hal-05569975⟩

• Article dans une revue

Plant- and Microalgae-Based Biotechnological Strategies for Affordable and Non-Invasive Delivery of Antidiabetic Peptides

Thibault Boscart, Alexandre Barras, Valérie Plaisance, Valérie Pawlowski, Emerson Giovanelli, Muriel Bardor, Christophe D’hulst, Amar Abderrahmani

The prevalence of diabetes and its worldwide co-morbidities is escalating. Therefore, the number of users of therapeutic peptides including insulin analogs and glucagon-like peptide 1 receptor agonists (GLP-1RAs), will unavoidably increase in the coming years. However, access to these two…

Pharmaceutics, 2026, 18 (2), pp.223. ⟨10.3390/pharmaceutics18020223⟩. ⟨hal-05553665⟩

• Article dans une revue

0.2-<i>μ</i>m InP/GaAsSb DHBT Transferred on Si-HR With 28 mW/<i>μ</i>m² at 94 GHz

Abdelmalek Zemour, Malek Zegaoui, Christophe Coinon, Yannick Roelens, Etienne Okada, Pascal Chevalier, Mohammed Zaknoune

We present 94 GHz large-signal load-pull measurements of a transferred InP/GaAsSb double heterojunction bipolar transistor fabricated on a high-resistivity silicon (Si-HR) substrate. The characterized device features an emitter area of 0.19 × 8.9 µm 2 . Biased for highest power, an output power of…