Publications

• Communication dans un congrès

An investigation of temperature effects on CPW and MSL on SOI substrate for RF applications

M. Si Moussa, C. Pavageau, D. Lederer, L. Picheta, Francois Danneville, J. Russat, N. Fel, J.P. Raskin

2005, pp.70-71. ⟨hal-00125308⟩

• Communication dans un congrès

New HEMT structures for THz applications

A. Cappy, Nicolas Wichmann, S. Bollaert, X. Wallart, Yannick Roelens, A. Shchepetov, W. Knap

Device Research Conference, DRC 2005, 2005, Santa Barbara, CA, United States. ⟨hal-00125315⟩

• Article dans une revue

Physical study of the avalanche breakdown phenomenon in HEMTs

M. Elkhou, Michel Rousseau, H. Gerard, Jean-Claude de Jaeger

Solid-State Electronics, 2005, 49, pp.535-544. ⟨hal-00126451⟩

• Communication dans un congrès

Electrical coupling in two-dimensional arrays of PbSe nanocrystals

P. Liljeroth, K. Overgaag, B. Grandidier, S. Hickey, D. Vanmaekelbergh

Materials Research Society 2005 Fall Meeting, 2005, Boston, MA, United States. ⟨hal-00126438⟩

• Communication dans un congrès

Design and modeling of a specific microwave applicator for the treatment of snoring

Pierre-Yves Cresson, C. Ricard, Nicolas Bernardin, Luc Dubois, Joseph Pribetich

One of the main objectives of using microwaves in medical applications is to make use of the therapeutic effects resulting from the interaction between electromagnetic waves and biological tissues in order to obtain a local heating. For this purpose, a large number of devices have been designed and…

2005 MTT-S International Microwave Symposium Digest, Jun 2005, Long Beach, CA, United States. 4 pp., ⟨10.1109/MWSYM.2005.1517072⟩. ⟨hal-00126767⟩

• Communication dans un congrès

Performances d'un système CDMA asynchrone : cas du canal à 60 GHz

R. Okouyi, Laurent Clavier, C. Garnier, W. Sawaya, Y. Delignon

Actes des 4èmes Journées Franco-Maghrébines des Microondes et leurs Applications, 2005, Rabat, Maroc. ⟨hal-00126738⟩

• Article dans une revue

Humidity effects on the electrical properties of hexagonal boron nitride thin films

Ali Soltani, P. Thevenin, H. Bakhtiar, A. Bath

Thin films of hexagonal boron nitride (h-BN) were grown by a plasma enhanced chemical vapour deposition (PECVD) technique. The quality of the films was assessed by infrared spectroscopy, microRaman spectroscopy as a function of annealing temperature and by X-ray photoelectron spectroscopy. The…

Thin Solid Films, 2005, 471 (1-2-3), pp.277-286. ⟨10.1016/j.tsf.2004.06.142⟩. ⟨hal-00323137⟩

• Article dans une revue

Exons, introns and DNA thermodynamics

Enrico Carlon, Mehdi Lejard Malki, Ralf Blossey

The genes of eukaryotes are characterized by protein coding fragments, the exons, interrupted by introns, i.e. stretches of DNA which do not carry any useful information for the protein synthesis. We have analyzed the melting behavior of randomly selected human cDNA sequences obtained from the…

Physical Review Letters, 2005, 94, pp.178101. ⟨10.1103/PhysRevLett.94.178101⟩. ⟨hal-00128506⟩

• Article dans une revue

Electrical damage induced by reactive ion-beam etching of lead-zirconate-titanate thin films

Caroline Soyer, Eric Cattan, Denis Remiens

Ion-beam etching of sputtered Pb(Zrx,Ti1-x)O3 (PZT) thin films with x equal to 0.54 grown on Pt/TiOx/SiO2/Si substrates has been performed using pure Ar gas and a varying CHF3/Ar gas mixing ratio. The etch rate dependence on the process parameters (gas composition, current density, and acceleration…

Journal of Applied Physics, 2005, 97 (11), pp.114110. ⟨10.1063/1.1923589⟩. ⟨hal-00130819⟩

• Article dans une revue

In situ laser assisted diagnostics on growth of thick PACVD organosilicon films

Philippe Supiot, Céline Vivien, M. Aimard, R. Sumera, Bertrand Bocquet

The purpose of the present work is to determine the growth rate of an organosilicon film during the deposition process. The films are obtained from the chemical decomposition of the 1,1,3,3 TetraMethylDiSilOxane (TMDSO) monomer premixed with oxygen by reaction in the far remote afterglow of a…

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes, 2005, 9 (2), pp.287-297. ⟨10.1615/HighTempMatProc.v9.i2.110⟩. ⟨hal-00247652⟩