Publications

Affichage de 13211 à 13220 sur 16092


  • Communication dans un congrès

Fabrication of III-V/polymer optical nanowires and nanogratings for nanophotonic devices

D. Lauvernier, Jean-Pierre Vilcot, Didier Decoster

2005, pp.449-459. ⟨hal-00126236⟩

  • Communication dans un congrès

Nanotransistors pour émission THz

S. Bollaert, Yannick Roelens, A. Shchepetov, X. Wallart, A. Cappy, J. Lusakowski, W. Knap, N. Dyakonova, M. Dyakonov

3èmes Journées THz, 2005, Aussois, France. ⟨hal-00125897⟩

  • Communication dans un congrès

Thickness dependent morphology and resistivity of ultra-thin Al films on Si(111) by molecular beam expitaxy

D.K. Aswal, N. Joshi, A.K. Debnath, S.K. Gupta, D. Vuillaume, J.V. Yakhmi

Trends in NanoTechnology, TNT 2005, 2005, Oviedo, Spain. ⟨hal-00125603⟩

  • Communication dans un congrès

Charge injection and transport studied by EFM in molecular nanostructures : DNA and organic monolayers

T. Heim, K. Lmimouni, S. Lenfant, D. Vuillaume

Molecular-scale Electronics VII, 2005, San Diego, CA, United States. ⟨hal-00125586⟩

  • Article dans une revue

Organic field effect transistor based on a novel soluble pentacene precursor and operating at low voltages

D. Zander, N. Hoffmann, K. Lmimouni, S. Lenfant, C. Petit, D. Vuillaume

Microelectronic Engineering, 2005, 80, pp.394-397. ⟨hal-00125577⟩

  • Article dans une revue

Experimental evidence of backward wave on terahertz left-handed transmision lines

T. Crepin, Jean-Francois Lampin, T. Decoopman, X. Melique, L. Desplanque, D. Lippens

Applied Physics Letters, 2005, 87, pp.104105-1-3. ⟨hal-00125345⟩

  • Article dans une revue

High In content pseudomorphic InGaAs layers for high mobility heterostructures on InP(001)

X. Wallart, B. Pinsard, F. Mollot

Journal of Crystal Growth, 2005, 278, pp.516-520. ⟨hal-00125354⟩

  • Communication dans un congrès

High frequency noise of SOI MOSFETs : performances and limitations

Francois Danneville, G. Pailloncy, A. Siligaris, B. Iniguez, Gilles Dambrine

SPIE Fluctuations and Noise Conference, Noise in Devices and Circuits III, 2005, Austin, TX, United States. ⟨hal-00125318⟩