Publications

• ART

Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

N. Dyakonova, J. Lusakowski, W. Knap, M. Levinshtein, M. S. Shur, S. Bollaert, A. Cappy

Journal of Applied Physics, 2005, 97, pp.114313-1-5. ⟨hal-00125161⟩

• COMM

Nanomachined electrospray ionisation tips

C. Descatoire, David Troadec, A. Ashcroft, L. Buchaillot, S. Arscott

2005, pp.122-123. ⟨hal-00130658⟩

• COMM

3D self-assembling of SU-8 microstructures on silicon by plasma induced compressive stress

Jean-Baptiste Bureau, Bernard Legrand, Dominique Collard, Lionel Buchaillot

This paper presents the development of suspended movable microstructures made of SU-8 photoresist where compressive stress leads to 3D self-assembled microstructures. Internal compressive stress in the photoresist is induced by an SF/sub 6/ based plasma process. Clamped-clamped beam structures have…

13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05., Jun 2005, Seoul, South Korea. pp.19-22, ⟨10.1109/SENSOR.2005.1496348⟩. ⟨hal-00128655⟩

• COMM

Microsystèmes, résonateurs électromécaniques : où cela nous mène-t-il ?

Vincent Agache, Emmanuel Quévy, Olivier Millet, Anne-Sophie Rollier, Roger Ringot, Dominique Collard, Bernard Legrand, Lionel Buchaillot

Ecole Nanosciences, 2005, Anglet, France. ⟨hal-00126215⟩

• COMM

Tensile stress determination in silicon nitride membrane by AFM characterization

A.S. Rollier, Bernard Legrand, D. Deresmes, M. Lagouge, D. Collard, L. Buchaillot

2005, pp.828-831. ⟨hal-00125660⟩

• ART

Fabrication and characterization of 1.1 GHz blade nanoelectromechanical resonator

Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot, Hiroyuki Fujita

An electromechanical resonator based on a blade geometry is proposed in this letter. This particular geometry allows self-alignment of the mechanical resonator structure to its lateral electrodes while achieving high eigenfrequencies in the GHz range. This letter reports both the fabrication…

Applied Physics Letters, 2005, 86, pp.213104-1-3. ⟨10.1063/1.1929873⟩. ⟨hal-00125633⟩

• OTHER

Etude de faisabilité de circuits pour systèmes de communication en bande millimétrique, en technologie BiCMOS SiGeC 0,13 µm

S. Pruvost

2005. ⟨hal-00126188⟩

• ART

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

G. Larrieu, Emmanuel Dubois

This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB MOSFETs are shown to steadily progress with respect to conventional highly doped source/drain with a…

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2720-2726. ⟨10.1109/TED.2005.859703⟩. ⟨hal-00138397⟩

• COMM

Caractérisation THz de lignes de Goubau par échantillonnage électro-optique pour BioMEMS cellulaire

A. Treizebre, Tahsin Akalin, L. Desplanque, Jean-Francois Lampin, Bertrand Bocquet

7èmes Journées des Phénomènes Ultra-rapides, 2005, Villeneuve d'Ascq, France. ⟨hal-00147497⟩

• COMM

Adaptive multi-path channel estimation in CDMA based on prefiltering : combination with a linear equalizer

E. Simon, L. Ros

Proceedings of the 14th IST Mobile and Wireless Communications Summit, 2005, Dresden, Germany. ⟨hal-00247774⟩