Publications

• ART

Comparison between carried-induced optical index, loss variations and carrier lifetime in GalnAsP/InP heterostructures for 1.55 μm DOS application

Malek Zegaoui, Didier Decoster, Joseph Harari, Jean-Pierre Vilcot, F. Mollot, V. Magnin, Jean Chazelas

Experimentally carrier-induced optical index, propagation excess loss and carrier lifetime variations against injected current in n +-InP/i- InGaAsP/i-InP/p +-InP heterostructures are investigated. The heterostructures have quaternary bandgap composition of λ g = 1.18 and 1.30 urn, and they were…

Electronics Letters, 2005, 41 (10), pp.613-614. ⟨10.1049/el:20050770⟩. ⟨hal-00125658⟩

• OTHER

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences

C. Pavageau

2005. ⟨hal-00126201⟩

• OTHER

Réalisation et caractérisation de transistors HEMTs AlInAs/GaInAs de longueur de grille sub-50 nanomètres et de transistors sans couche tampon

I. Duszynski

2005. ⟨hal-00126203⟩

• COMM

Composition modulation and local structure in strained diluted GaInNAs nitride alloy thin layers

C. Priester, A. Metsue

2005, pp.0891-EE10-29.1 - 0891-EE10-29.6. ⟨hal-00126205⟩

• ART

Comparison between DS-CDMA and modified Gegenbauer functions for a multi-user communication Ultra Wide Band system

F. Elbahhar, Atika Rivenq, Jean-Michel Rouvaen, Marc Heddebaut, Tariq Boukour

An innovative multiuser communication system based on the ultra-waveband (UWB) technique is studied. Two coding techniques are proposed: the first is based on direct-sequence code-division multiple access (DS-CDMA) associated with the UWB system. The second innovative technique uses orthogonal…

IEE Proceedings. Communications, 2005, 152 (6), pp.1021-1028. ⟨10.1049/ip-com:20045236⟩. ⟨hal-00126472⟩

• OTHER

Amélioration des transmissions vidéo MPEG-2 sur lignes ADSL basée sur une optimisation conjointe source/canal de la qualité vidéo

C. Goudemand

2005. ⟨hal-00126473⟩

• COMM

Noise in SOI MOSFETs and gate-all-around transistors

B. Iniguez, A. Lazaro, H.A. Hamid, G. Pailloncy, Gilles Dambrine, Francois Danneville

18th International Conference on Noise and Fluctuations, ICNF 2005, 2005, Salamanca, Spain. ⟨hal-00125321⟩

• COMM

Inelastic electron tunnelling in metal/alkylsilane/silicon junctions

K. Lmimouni, C. Petit, G. Salace, S. Lenfant, D. Vuillaume

ElecMol'05, 2005, Grenoble, France. ⟨hal-00125604⟩

• COMM

Role of interface on the direct tunneling and the inelastic tunneling behaviors in metal/alkylsilane/silicon junctions

D. Vuillaume, D. K. Aswal, David Guérin, S. Lenfant, C. Petit, G. Salace, J. V. Yakhmi

French-Russian workshop on nanosciences and nanotechnologies, 2005, Lille, France. ⟨hal-00125618⟩

• ART

CBr4 and Be heavily doped InGaAs grown in a production MBE system

S. Godey, S. Dhellemmes, A. Wilk, M. Zaknoune, F. Mollot

Journal of Crystal Growth, 2005, 278, pp.600-603. ⟨hal-00154907⟩