13th International Conference on Solid-State Sensors, Actuators and Microsystems, 2005. Digest of Technical Papers. TRANSDUCERS '05., Jun 2005, Seoul, South Korea. pp.19-22, ⟨10.1109/SENSOR.2005.1496348⟩. ⟨hal-00128655⟩

COMM

Microsystèmes, résonateurs électromécaniques : où cela nous mène-t-il ?

Vincent Agache, Emmanuel Quévy, Olivier Millet, Anne-Sophie Rollier, Roger Ringot, Dominique Collard, Bernard Legrand, Lionel Buchaillot

Ecole Nanosciences, 2005, Anglet, France. ⟨hal-00126215⟩

COMM

Tensile stress determination in silicon nitride membrane by AFM characterization

A.S. Rollier, Bernard Legrand, D. Deresmes, M. Lagouge, D. Collard, L. Buchaillot

2005, pp.828-831. ⟨hal-00125660⟩

ART

Fabrication and characterization of 1.1 GHz blade nanoelectromechanical resonator

Vincent Agache, Bernard Legrand, Dominique Collard, Lionel Buchaillot, Hiroyuki Fujita

An electromechanical resonator based on a blade geometry is proposed in this letter. This particular geometry allows self-alignment of the mechanical resonator structure to its lateral electrodes while achieving high eigenfrequencies in the GHz range. This letter reports both the fabrication…

Applied Physics Letters, 2005, 86, pp.213104-1-3. ⟨10.1063/1.1929873⟩. ⟨hal-00125633⟩

OTHER

Etude de faisabilité de circuits pour systèmes de communication en bande millimétrique, en technologie BiCMOS SiGeC 0,13 µm

S. Pruvost

2005. ⟨hal-00126188⟩

ART

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

G. Larrieu, Emmanuel Dubois

This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB MOSFETs are shown to steadily progress with respect to conventional highly doped source/drain with a…

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2720-2726. ⟨10.1109/TED.2005.859703⟩. ⟨hal-00138397⟩