Publications

• Article dans une revue

Model for ferroelectric semiconductors thin films accounting for the space varying permittivity

Laurent Baudry, Jérôme Tournier

Reducing thickness of ferroelectric films typically comes with an apparent degradation of their ferroelectric and dielectric properties. The existence of low-dielectric interfacial layers is often invoked to explain such behaviors. Much work has been done on modeling ferroelectric thin films by…

Journal of Applied Physics, 2005, 97, pp.024104. ⟨10.1063/1.1834728⟩. ⟨hal-00125348⟩

• Article dans une revue

Interferometric detection of acoustic waves at air-solid interface – Applications to non-destructive testing

Frédéric Jenot, Mohammadi Ouaftouh, Marc Duquennoy, Mohamed Ourak

Journal of Applied Physics, 2005, 97, pp.094905-1-8. ⟨hal-00140391⟩

• Article dans une revue

Semicarbazide-functionalized Si(111) surfaces for the site-specific immobilization of peptides

Yannick Coffinier, C. Olivier, A. Perzyna, B. Grandidier, X. Wallart, J.O. Durand, O. Melnyk, D. Stievenard

Langmuir, 2005, 21, pp.1489. ⟨10.1021/la047781s⟩. ⟨hal-00126422⟩

• Article dans une revue

Biaxial initial stress characterization of bilayer gold RF-switches

K. Yacine, F. Flourens, David Bourrier, Ludovic Salvagnac, P. Calmont, X. Lafontan, Q.H. Duong, L. Buchaillot, D. Peyrou, Patrick Pons, Robert Plana

Microelectronics Reliability, 2005, 45, pp.1776-1781. ⟨10.1016/j.microrel.2005.07.093⟩. ⟨hal-00128652⟩

• Communication dans un congrès

Organic field effect transistor based on a novel soluble pentacene precursor and operating at low voltages

D. Zander, N. Hoffmann, K. Lmimouni, S. Lenfant, C. Petit, D. Vuillaume

14th Biennial Conference on Insulating Films on Semiconductors, 2005, Belgium. pp.394-397, ⟨10.1016/j.mee.2005.04.096⟩. ⟨hal-00247650⟩

• Article dans une revue

Reaction pathways during the thermal conversion of polysiloxane precursors into oxycarbide ceramics

D. Bahloul-Hourlier, J. Latournerie, P. Dempsey

Journal of the European Ceramic Society, 2005, 25, pp.979-985. ⟨10.1016/j.jeurceramsoc.2004.05.012⟩. ⟨hal-00247488⟩

• Autre publication scientifique

Réalisation et caractérisation de transistors HEMTs AlInAs/GaInAs de longueur de grille sub-50 nanomètres et de transistors sans couche tampon

I. Duszynski

2005. ⟨hal-00126203⟩

• Autre publication scientifique

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences

C. Pavageau

2005. ⟨hal-00126201⟩

• Communication dans un congrès

Tensile stress determination in silicon nitride membrane by AFM characterization

A.S. Rollier, Bernard Legrand, D. Deresmes, M. Lagouge, D. Collard, L. Buchaillot

2005, pp.828-831. ⟨hal-00125660⟩

• Communication dans un congrès

Composition modulation and local structure in strained diluted GaInNAs nitride alloy thin layers

C. Priester, A. Metsue

2005, pp.0891-EE10-29.1 - 0891-EE10-29.6. ⟨hal-00126205⟩