Publications

• Article dans une revue

Evaluation of residual stress profiles using the Barkhausen noise effect to verify high performance aerospace bearings

S. Devaux, Marc Duquennoy, J. Gualandrii, Mohammadi Ouaftouh, Mohamed Ourak

NDT & E International, 2005, 20, pp.9-24. ⟨hal-00140392⟩

• Article dans une revue

Detection of moving objects and flows in liquids by ultrasonic phase

Y. Pyl'Nov, Vladimir Preobrazhensky, Philippe Pernod

Acoustical Physics, 2005, 51, pp.105-109. ⟨hal-00137663⟩

• Communication dans un congrès

Implementation of a 2D electron-thermal model for power semiconductor devices simulation : application on gallium nitride

Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger

Comsol Multiphysics Conference, 2005, Paris, France. ⟨hal-00126464⟩

• Communication dans un congrès

High mobility InAs/AlInAs metamorphic heterostructures on InP (001)

X. Wallart, J. Lastennet, F. Mollot

2005, pp.94-97. ⟨hal-00125391⟩

• Communication dans un congrès

Noise in SOI MOSFETs and gate-all-around transistors

B. Iniguez, A. Lazaro, H.A. Hamid, G. Pailloncy, Gilles Dambrine, Francois Danneville

18th International Conference on Noise and Fluctuations, ICNF 2005, 2005, Salamanca, Spain. ⟨hal-00125321⟩

• Article dans une revue

Scanning tunneling microscopy and spectroscopy of reconstructed Si(100) surfaces

M. Dubois, Luis Perdigao, Christophe Delerue, Guy Allan, B. Grandidier, D. Deresmes, Didier Stiévenard

We combine theory and experiments to study bias-dependent scanning tunneling microscopy (STM) images of the different reconstructions of Si(100) surfaces. Coupling with the analysis of scanning tunneling spectroscopy (STS) data, we show that STM images result from a subtle interplay between…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.165322-1-10. ⟨10.1103/PhysRevB.71.165322⟩. ⟨hal-00126420⟩

• Article dans une revue

Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate

G. Larrieu, Emmanuel Dubois

This paper demonstrates the successful integration of Schottky barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB MOSFETs are shown to steadily progress with respect to conventional highly doped source/drain with a…

IEEE Transactions on Electron Devices, 2005, 52 (12), pp.2720-2726. ⟨10.1109/TED.2005.859703⟩. ⟨hal-00138397⟩

• Article dans une revue

Targeted deletion of Kv4.2 eliminates I(to,f) and results in electrical and molecular remodeling, with no evidence of ventricular hypertrophy or myocardial dysfunction

W. Guo, W. E. Jung, Céline Marionneau, F. Aimond, H. Xu, K. A. Yamada, T. L. Schwarz, S. Demolombe, J. M. Nerbonne

Circulation Research, 2005, 97 (12), pp.1342-50. ⟨10.1161/01.RES.0000196559.63223.aa⟩. ⟨hal-02363774⟩

• Communication dans un congrès

Ultrasonic estimation of residual stress distribution in flat glass tempering

D. Devos, Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, Mohamed Ourak

Proceedings of the 3rd International Conference of the African Materials Research Society, 2005, Marrakech, Morocco. ⟨hal-00140795⟩

• Communication dans un congrès

Perfluorinated polymer based graded index fiber in LAN operating at 850 nm

A. Goffin, C. Lethien, C. Vloeberghs, Jean-Pierre Vilcot, Christophe Loyez

Proceedings of the 14th International Conference on Plastic Optical Fiber, 2005, Hong Kong, China. ⟨hal-00131127⟩