Publications

• Communication dans un congrès

Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates : application to X-band low noise amplifiers

Jean-Claude de Jaeger, S.L. Delage, Gilles Dambrine, M.A. Poisson, Virginie Hoel, Sylvie Lepilliet, B. Grimbert, E. Morvan, Y. Mancuso, G. Gauthier, A. Lefrancois, Y. Cordier

2005, pp.229-232. ⟨hal-00126458⟩

• Communication dans un congrès

Nanotechnologie, micro et nanosystèmes

Bernard Legrand

5ème Colloque International TELECOM'2005 & 4èmes Journées Franco-Magrhébines des Micro-ondes et leurs Applications, JFMMA, 2005, Rabat, Maroc. ⟨hal-00126233⟩

• Article dans une revue

Behavior of a common source traveling wave amplifier versus temperature in SOI technology

M. Si Moussa, C. Pavageau, P. Simon, Francois Danneville, J. Russat, N. Fel, J.P. Raskin, D. Vanoenacker-Janvier

EuMA - Journal of the European Microwave Association, 2005, 1, pp.288-292. ⟨hal-00125165⟩

• Communication dans un congrès

Micro-commutateurs MEMS série sur arséniure de gallium avec encapsulation pour antennes intelligentes pour réseau d'objets mobiles communicants à 60 GHz

A. Boé, M. Fryziel, N. Deparis, Christophe Loyez, N. Rolland, H. Toshiyoshi, P.A. Rolland

Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France. ⟨hal-00126743⟩

• Communication dans un congrès

High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

Gilles Dambrine, Daniel Gloria, Patrick Scheerer, Christine Raynaud, Francois Danneville, Sylvie Lepilliet, Alexandre Siligaris, Guillaume Pailloncy, Baudouin Martineau, Emmanuel Bouhana, Raphael Valentin

65 nm n-MOSFETs show state-of-the-art cut-off frequency with f t = 210 GHz and microwave low noise and high gain properties (NF min = 0.8 dB and G ass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the…

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, Oct 2005, Paris, France. pp.97-100. ⟨hal-00125303⟩

• Article dans une revue

Acoustic channel drop tunneling in a phononic crystal

Yan Pennec, Bahram Djafari-Rouhani, Jerome O. Vasseur, Hocine Larabi, Abdelkrim Khelif, Abdelkrim Choujaa, Sarah Benchabane, Vincent Laude

We study both theoretically and experimentally the possibility of resonant tunneling of acoustic waves between two parallel guides created in a phononic crystal composed of steel cylinders in water. In the absolute bandgap of the phononic crystal, ranging from 250 to 325 kHz, a full transmission…

Applied Physics Letters, 2005, 87 (26), pp.261912. ⟨10.1063/1.2158019⟩. ⟨hal-00072921⟩

• Article dans une revue

Benzocyclobutene wafer bonding for III-V nanophotonic guiding structures

D. Lauvernier, Jean-Pierre Vilcot, S. Garidel, S. Mc Murtry, Didier Decoster

Electronics Letters, 2005, 41, pp.1170-1172. ⟨hal-00125663⟩

• Communication dans un congrès

Ballistic nanodevices for high frequency applications

S. Bollaert

International Conference on Materials for Advanced Technologies, ICMAT 2005, 2005, Singapore, Singapore. ⟨hal-00125313⟩

• Communication dans un congrès

A 40 GHz superheterodyne receiver integrated in 0.13 µm BiCMOS SiGe:C HBT technology

S. Pruvost, I. Telliez, Francois Danneville, Gilles Dambrine, M. Laurens

2005, pp.10-13. ⟨hal-00125902⟩

• Article dans une revue

Molecular interactions of PTCDA on Si(100)

T. Soubiron, Francois Vaurette, J.P. Nys, B. Grandidier, X. Wallart, D. Stievenard

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2005, 581, pp.178-188. ⟨hal-00126421⟩