Publications

Affichage de 13671 à 13680 sur 16056


  • COMM

Characterization of individual bio-cells with thermally actuated probe arrays

Y.H. Cho, Dominique Collard, Lionel Buchaillot, Bernard Legrand, Beomjoon Kim

Nonimaging Optics and Efficient Illumination Systems, Aug 2004, Denver, CO, United States. pp.425-429. ⟨hal-00141170⟩

  • ART

Systematic structural characterization of the high-temperature behavior of nearly stoichiometric silicon oxycarbide glasses

H. Brequel, J. Parmentier, S. Walter, R. Badheka, G. Trimmel, Sylvie Masse, J. Latournerie, P. Dempsey, C. Turquat, A. Desmartin-Chomel, L. Neindre-Prum, U. Jayasooriya, D. Bahloul-Hourlier, J. Kleebe, G. Soraru, S. Enzo, F. Babonneau

Chemistry of Materials, 2004, 16, pp.2585-2598. ⟨10.1021/cm049847a⟩. ⟨hal-00248020⟩

  • ART

Residual stress profiling of an aluminum alloy by laser ultrasonics

Y. Pan, M. Qian, Wei-Jiang Xu, Mohamed Ourak

Acta Acustica united with Acustica, 2004, 29, pp.254-257. ⟨hal-00162794⟩

  • COMM

Adsorption of PTCDA on Si(100) and Si(100)-H

T. Soubiron, Francois Vaurette, B. Grandidier, X. Wallart, J.P. Nys, D. Stievenard

NSTI Nanotechnology Conference and Trade Show, 2004, United States. pp.3/383-386. ⟨hal-00248093⟩

  • COMM

Synchronization over rapidly time-varying multi-path channels for CDMA downlink receiver in time-division mode

E. Simon, K. Raoof, L. Ros

12th European Signal Processing Conference, EUSIPCO 2004, 2004, Austria. pp.905-908. ⟨hal-00248124⟩

  • COMM

Novel 2D Interfaces for Nanoelectrospray-Mass Spectrometry

S. Arscott

Nanotech2004, 2004, Boston, United States. ⟨hal-02347767⟩

  • COMM

Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

Jean-Sebastien Galloo, Emmanuelle Pichonat, Yannick Roelens, S. Bollaert, X. Wallart, A. Cappy, Javier Mateos, Tomás González, Hervé Boutry, Vincent Bayot, Lukasz Bednarz, Isabelle Huynen

We have developed technolow based on GaInAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-Branch Junctions (TBJs), YBranch Junctions (YBJs)). Then we present DC Characterization of TBJs to show the transition from ballistic to ohmic…

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, May 2004, Kagoshima, Japan. pp.378-381, ⟨10.1109/ICIPRM.2004.1442734⟩. ⟨hal-00133896⟩

  • COMM

Bruit haute fréquence dans les transistors MOS sur SOI : méthodes de caractérisations et de modélisations

G. Pailloncy

WORKSHOP Laboratoire Commun IEMN/ST Microelectronics, 2004, Crolles, France. ⟨hal-00133898⟩