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Communication dans un congrès

Use of MIMO techniques for decreasing the output transmitting power of wireless systems

M. Lienard, Pierre Degauque

EMC Europe Workshop on Electromagnetic Compatibility of Wireless Systems, 2005, Roma, Italy. ⟨hal-00140426⟩

Communication dans un congrès

Design of an ultrasonic system for the online detection of foreign bodies embedded in viscoelastic media

Georges Nassar, Wei-Jiang Xu, Bertrand Nongaillard, Liévin Camus

Proceedings of the 2005 Joint World Congress on Ultrasonics/Ultrasonics International, WCU/UI'05, 2005, Beijing, China. ⟨hal-00140798⟩

Communication dans un congrès

High Accuracy 65nm OPC Verification: Full Process Window Model vs. Critical Failure ORC

Amandine Borjon, Jerome Belledent, Shumay D. Shang, Olivier Toublan, Corinne Miramond, Kyle Patterson, Kevin Lucas, Christophe Couderc, Yves Rody, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yorick Trouiller, Patrick Schiavone

It is becoming more and more difficult to ensure robust patterning after OPC due to the continuous reduction of layout dimensions and diminishing process windows associated with each successive lithographic generation. Lithographers must guarantee high imaging fidelity throughout the entire range…

2005, pp.1750-1761. ⟨hal-00023223⟩

Article dans une revue

Ultrasonic cavitation in thin liquid layers

A. Moussatov, C. Granger, Bertrand Dubus

Ultrasonics Sonochemistry, 2005, 12, pp.415-422. ⟨hal-00124472⟩

Communication dans un congrès

Inelastic electron tunnelling in metal/alkylsilane/silicon juntions

C. Petit, G. Salace, S. Lenfant, D. Vuillaume

8th European Conference on Molecular Electronics, ECME8, 2005, Bologna, Italy. ⟨hal-00125598⟩

Communication dans un congrès

Dielectric response of nanoscale organic monolayer : a new tool for spectroscopy

S. Pleutin, D. Tondelier, S. Lenfant, D. Vuillaume

8th European Conference on Molecular Electronics, ECME8, 2005, Bologna, Italy. ⟨hal-00125580⟩

Communication dans un congrès

High frequency low noise potentialities of down to 65nm technology nodes MOSFETs

Gilles Dambrine, Daniel Gloria, Patrick Scheerer, Christine Raynaud, Francois Danneville, Sylvie Lepilliet, Alexandre Siligaris, Guillaume Pailloncy, Baudouin Martineau, Emmanuel Bouhana, Raphael Valentin

65 nm n-MOSFETs show state-of-the-art cut-off frequency with f t = 210 GHz and microwave low noise and high gain properties (NF min = 0.8 dB and G ass = 17.3 dB at 12 GHz). As compared with the previous nodes, the high frequency properties of these MOSFETs continue to be in agreement with the…

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, Oct 2005, Paris, France. pp.97-100. ⟨hal-00125303⟩